Abstract:In this work, series of glass samples in the Ag30As28 (SexTe100-x)(42) (x = 15, 30, 50, 70, 85) system are prepared. Effects of the Se/Te ratio on density (rho), glass transition temperature (T-g), room-temperature conductivity (sigma(298k)) and crystallization behaviors of glasses are investigated, and their associations with the structure of glasses are discussed. Results show that with the increased substitution of Se for Te, the molar volume (M-v) decreases and T-g increases, indicating the increased space packing efficiency and the enhanced structure connectivity. The strengthened structure leads to an abnormal increase of rho when x is lower than 30 mol%. Further increase of the Se/Te ratio results in the reduction of p due to the dominant effect of smaller molar weight (M-w). The sigma(298k) of glasses decreases with Se increasing from 15 to 50 mol%, and then interestingly increases up to the level even higher than that of the sample with the lowest Se content (15 mol%). Raman spectra shows the transformation of main glass structure units from Te-based pyramids to Se-based complexes as the Se/Te ratio increases. According to XRD patterns of samples thermally treated at either lower (215 degrees C) or higher (265 degrees C) temperature, with the Se/Te ratio increasing, the dominant precipitated crystals suffer an evolution from AsTe to Ag2Te and finally to the AgAsSe2 semiconductor phase, consistent with the variation trend of Raman spectra. In terms of the structural similarity principle, we thus suppose that the formation of structural units similar to AgAsSe2 semiconductor crystals inversely increases the conductivity of glasses, realizing the mutual benefits of the improved thermal stability and increased conductivity of chalcogenide glasses.

Micro-structural studies of GeSe2-Ga2Se3-MX (MX = CsI and PbI2) glasses using Raman spectra

Microstructural studies of GeS2-In2S3-CsI chalcohalide glasses by Raman scattering

Microstructure and thermal properties of the GeS2–In2S3–CsI glassy system

Formation and Properties of GeSe2–Ga2Se3–PbI2 Novel Chalcohalide Glasses

Microstructure and thermal properties of the GeS 2 -In 2 S 3 -CsI glasses

Raman Spectroscopic Analysis of Ges2-Ga2s3-Pbi2 Chalcohalide Glasses

Formation and Properties of the Novel GeSe<sub>2</sub>–In<sub>2</sub>Se<sub>3</sub>–CsI Chalcohalide Glasses

Glass Formation and Properties of GeSe2–Ga2Se3–MX (MX is Alkali Halide) Chalcohalide Glasses

Near-Infrared Emission Properties And Energy Transfer Of Tm3+-Doped And Tm3+/Dy3+-Codoped Chalcohalide Glasses

The Study of Sm3+-doped Low-Phonon-energy Chalcohalide Glasses

Effect of CsI Addition on the Thermal Properties, Crystallization Kinetics and Short-Wavelength Absorption Edges of GeSe2–Ga2Se3 Glasses

Microstructural Analysis of Ga2S3–2MCl (M = K, Rb, Cs) Glasses Using Raman Scattering

Optical Properties and Local Structure of Dy3+-doped Chalcogenide and Chalcohalide Glasses

Micro-structural study of the GeS2-In2S3-KCl glassy system by Raman scattering.

Properties of Chalcohalide Glasses in the Ge-As-Se-Te-I System

Raman Scattering Studies of the GeS2–Ga2S3–CsCl Glassy System

Thermal Properties, Microstructure, and Conductivity of New Glasses Based on the Gese2-Ga2se3-Agi System

Formation and Structure of Chalcohalide Glasses in the As2Se3-AsTe-CuI System

Effect of Iodine (I-2) on Structural, Thermal and Optical Properties of Ge-Sb-S Chalcohalide Host Glasses and Ones Doped with Dy

Effects of the Se Substitution for Te on the Structure and Properties of Glasses in the Ag30As28(SexTe100-x)42 System

Infrared luminescence of Tm3+-doped chalcohalide glasses in GeS2–In2S3–CsBr system