Abstract:Insulating materials usually suffer charging effects when irradiated by charged particles. In this paper, we present a Monte Carlo study on the charging effect caused by electron beam irradiation for sample structures with any complex geometry. When transporting in an insulating solid, electrons encounter elastic and inelastic scattering events; the Mott cross section and a Lorentz-type dielectric function are respectively employed to describe such scatterings. In addition, the band gap and the electron-long optical phonon interaction are taken into account. The electronic excitation in inelastic scattering causes generation of electron-hole pairs; these negative and positive charges establish an inner electric field, which in turn induces the drift of charges to be trapped by impurities, defects, vacancies etc in the solid, where the distributions of trapping sites are assumed to have uniform density. Under charging conditions, the inner electric field distorts electron trajectories, and the surface electric potential dynamically alters secondary electron emission. We present, in this work, an iterative modeling method for a self-consistent calculation of electric potential; the method has advantages in treating any structure with arbitrary complex geometry, in comparison with the image charge method-which is limited to a quite simple boundary geometry. Our modeling is based on: the combination of the finite triangle mesh method for an arbitrary geometry construction; a self-consistent method for the spatial potential calculation; and a full dynamic description for the motion of deposited charges. Example calculations have been done to simulate secondary electron yield of SiO2 for a semi-infinite solid, the charging for a heterostructure of SiO2 film grown on an Au substrate, and SEM imaging of a SiO2 line structure with rough surfaces and SiO2 nanoparticles with irregular shapes. The simulations have explored interesting interlaced charge layer distribution underneath the nanoparticle surface and the mechanism by which it is produced.

Electrostatic force influenced by space charge in submicrometer or nanometer silicon microstructures

First Principles Calculation on Quantum Transport of Au-Si 3 -Au Nanoscale Junction

The space charge limited current and huge linear magnetoresistance in silicon

Determination of Electrostatic Force and Its Characteristics Based on Phase Difference by Amplitude Modulation Atomic Force Microscopy.

Casimir Force Correction Between Parallel Polysilicon Plates

Charging Effect in Silicon Nanocrystals Observed by Electrostatic and Kelvin-probe Force Microscopy

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

Modeling of Lateral Charge Transfer in Si Nanocrystals in SiO2 Thin Film

Nanoscale capacitance: a classical charge-dipole approximation

Electric Field Inside A Hole-Only Device And Insights Into Space-Charge-Limited Current Measurement For Organic Semiconductors

Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions

Charge effect on the irradiation damage of silicon: Insights from phase-field simulation

Quantitative Measurement of the Charge Carrier Concentration Using Dielectric Force Microscopy

Charge distribution at metal-multilayered semiconductor interfaces

First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer devices

Space charge effects in mixed ionic-electronic conducting electrodes for solid-state batteries

A Monte Carlo Modeling on Charging Effect for Structures with Arbitrary Geometries

EFFECT OF C-Si/electrolyte INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION

Microstructure- and concentration-dependence of lithium diffusion in the silicon anode: Kinetic Monte Carlo simulations and complex network analysis

A simple method considering the synergetic effect of space charge and inhomogeneous material conductivity for DC electric field computation