Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Atomic Force Microscopy On The Ga0.16in0.84as0.80sb0.20 Epilayer Grown By Metalorganic Chemical Vapor Deposition

Isotropic Growth Islands of Ga 0.16 in 0.84 As 0.80 Sb 0.20 Epilayer Grown by Metalorganic Chemical Vapour Deposition

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Crystalline State Of Insb Epilayers On Gaas Substrates By Metalorganic Chemical Vapor Deposition

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD Through Interfacial Misfit Dislocations Array

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

(Ga, Gd, As) Film Growth on GaAs Substrate by Low-Energy Ion-Beam Deposit

Atomic Structures on a GaAs(001) Surface Grown by Molecular Beam Epitaxy

Kinetic Monte Carlo Simulation of Heteroepitaxial Growth of Insb Buffer Layer and Effects on Insb/Gaas Films

Growth of GaInAsSb alloys by metalorganic chemical vapor deposition

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

A Strain Relief Mode at Interface of GaSb/GaAs Grown by Metalorganic Chemical Vapor Deposition