Effect of sintering parameters on the conductivity of reaction-formed silicon carbide

Zhenli Lu,Liufeng Xiong,Qingwei Huang,Jiqiang Gao,Zhihao Jin
1998-01-01
Abstract:The effects of silicon carbide particle size, processing parameters on conductivity of reaction-forming silicon carbide have been investigated. The results show that the silicon carbide resistivity increases with the decrease of particle size and the increase of pressure of forming precursor and sintering atmosphere. But the effect of sintering temperature could be ignored. The microstructure and resistivity of silicon carbide are also discussed.
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