Breakthrough to the "silicon Limit" of Power Devices

XB Chen

DOI: https://doi.org/10.1109/icsict.1998.785827

1998-01-01

Abstract:The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.

What problem does this paper attempt to address?

Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

L. C. Yu,K. Sheng

DOI: https://doi.org/10.1016/j.sse.2006.04.038

IF: 1.916

2006-01-01

Solid-State Electronics

Abstract:SiC is known as the next generation material for power semiconductor devices. One important issue in the design of high voltage power devices is the trade-off between breakdown voltage and specific on-resistance. In this paper, possibility of developing 4H–SiC devices beyond its own unipolar theoretical limit RSP_ON∝VBR2.43 by using the super-junction concept has been investigated for the first time. Effects of structural parameters on the voltage blocking capability and specific on-resistance are studied. Device structures achieving optimum FOMs (Figure of Merit) at various voltage ranges have been designed and their advantages over the conventional structures are quantified. In addition, simple models have also been developed and verified by 2D numerical simulations for 4H–SiC super-junction structures to predict their voltage blocking and forward conduction capability. The results show that, with currently available technology, device FOM (for the same VBR) exceeding the 4H–SiC theoretical unipolar limit by 300% is possible.
Ultra-Fast Ligbts And Superjunction Devices In Membrane Technology

f udrea,t trajkovic,c lee,d m garner,xiaojun yuan,j c joyce,nishad udugampola,guillaumme bonnet,david robert coulson,robert jacques,mat izmajlowicz,n van der duijn schouten,z a ansari,philip john moyse,g a j amaratunga

DOI: https://doi.org/10.1109/ISPSD.2005.1488002

2005-01-01

Abstract:Back-side etching of the entire silicon substrate under part of the drift region of a SOI power device was first proposed in [1-2] and experimentally reported in [3]. This technology concept enables high voltage devices to be embedded in a thin silicon/oxide membrane resulting in very significant improvements in breakdown ability and switching speed. This paper presents new results from advanced membrane high power devices and fully functional power ICs. Furthermore, record switching speeds for the LIGBT are reported. The feasibility of realising superjunction structures (3D Resurf) with breakdown capability in excess of 700V using this technology are also demonstrated.
New "silicon Limit" of Power Devices

XB Chen,HQ Yang,M Cheng

DOI: https://doi.org/10.1016/s0038-1101(02)00010-2

IF: 1.916

2002-01-01

Solid-State Electronics

Abstract:The hexagonal pattern of the voltage-sustaining layer in the COOLMOST with p-region in the center of each unit cell, which produces the lowest specific on-resistance, is studied based on a technologically achievable minimum aspect ratio of the width of each region to the thickness of the voltage-sustaining layer. A breakdown voltage higher than the previous result is also achieved by breaking the requirement of the different peak fields to be equal. Furthermore, the doping of the p-region near the drain is modified to get a better result. It is believed that this is the new theoretical “Silicon Limit”. The results show that a value of Ron less than 1/3 of the previous one is obtained. Theoretical analysis is given and shows in good agreement with the numerical simulation.
Membrane High Voltage Devices - A Milestone Concept In Power Ics

F Udrea,T Trajkovic,Gaj Amaratunga

DOI: https://doi.org/10.1109/IEDM.2004.1419185

2004-01-01

Abstract:We report for the first time a novel technology concept in Power ICs. We present detailed experimental data obtained during several years of development and demonstrate the application of the new technology in a range of highly efficient switch mode power supplies (SMPS). This technology is capable of delivering more than 3 times higher current density (30 A/cm(2)), and two to five times the switching speed (500 kHz for 650 V rated devices) of state-of-the-art power IC technologies such as Junction-Isolation or Silicon-on-Insulator. The new concept is based on merging of the MEMS and CMOS SOI technologies to increase the breakdown ability of the power device and reduce its output capacitance (1). The MEMS step is fully CMOS compatible and consists of a back-side deep reactive ion etching (DRIE) performed selectively in the drift region of the power device to realize multiple membranes of ultra-thin silicon-dielectric films.
Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

T Trajkovic,F Udrea,Gaj Amaratunga,Wi Milne,Ssm Chan,Pr Waind,J Thomson,De Crees

DOI: https://doi.org/10.1080/002072199132716

1999-01-01

International Journal of Electronics

Abstract:The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current flow. In this paper we give a review of development of trench gate IGBTs and we describe briefly new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.
Recent Progress in SiC and GaN Power Devices

Kuang Sheng,Shu Yang,Qing Guo,Hongyi Xu

DOI: https://doi.org/10.1149/08007.0037ecst

2017-01-01

Abstract:Wide bandgap SiC and GaN power devices are attractive for next-generation power electronic systems with increased efficiency and power density. In this paper, we review recent progress in SiC and GaN power devices, including the following. (1) Interface optimization techniques for SiC MOSFETs (e.g. NO/N2O annealing, P incorporation, metal interfacial-layer, high-k dielectric deposition, etc.) will be discussed. (2) Longterm reliability of SiC MOSFETs with special focus on time-dependent dielectric breakdown (TDDB) will be presented. (3) We will introduce our latest progress in the development of superjunction SiC devices, which can break the fundamental limit of the conventional unipolar devices. (4) In GaN-based lateral power devices, the 2DEG channel is an inherent normally-on channel. To achieve fail-safe operation and simpler gate drive circuit, normally-off device techniques will be introduced and compared.
Theory of a novel voltage sustaining (CB) layer for power devices

Chen Xingbi

IF: 1.019

1998-01-01

Chinese Journal of Electronics

Abstract:The theory of a novel voltage sustaining layer for power devices, called as Composite Buffer layer (shortly as CB-layer) is proposed. The CB-layer consists of alternating stacked n-regions and p-regions, where the interfaces between any n-region and its neighbouring p-region are perpendicular to the two planes across which the applied voltage is to be sustained. In the off-state, the fields induced by the charges of both regions compensate each other to a large extent so that the doping concentrations of both n-regions and p-regions can be very high without causing a lowering of the breakdown voltage. On the other hand, heavy doping makes the on-voltage very low and the saturation current density very high. The relation of the specific on-resistance Ron for unipolar conduction and the sustaining voltage VB for such a structure is approximately Ron ∝ V1 32 B, which is a breakthrough to the "Silicon Limit" Ron ∝ V2.5 B. The design method of the CB-layer is introduced in detail. The results of simulation are shown to be in perfect agreement with the theory. The structure has applicability to a wide variety of different power devices. One example of such an application is to use it in an RMOST, which shows excellent performances.
Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Li Liu,Jue Wang,Zishi Wang,Miaoguang Bai,Junze Li,Zhengyun Zhu,Hongyi Xu,Na Ren,Qing Guo,Kuang Sheng

DOI: https://doi.org/10.1109/ispsd57135.2023.10147418

2023-01-01

Abstract:This paper demonstrates a SiC lateral MOSFET (LMOS) with DOUBLE RESURFs (reduce surface field) technology to improve the device's breakdown voltage. The electrical characteristics and analysis of the fabricated SiC LMOS are carried out in terms of output, transfer and blocking characteristics, as well as the leakage current mechanisms. In particular, the effect of the length of the P-top RESURFs on device performance is studied. The experimental results indicate that the SiC LMOS with P-top RESURFs of length $7\ \mu\mathrm{m}$ exhibits best comprehensively with the highest breakdown voltage of 970 V, the highest Baliga's figure of merit BFOM of 83.6MW/cm 2 , and low (gate) leakage current. Which is recommended in this work and also encourages its further application in the power integrated circuits (Power ICs).
New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

Meng Zhang,Baikui Li,Jin Wei

DOI: https://doi.org/10.3390/ma13112581

IF: 3.4

2020-01-01

Materials

Abstract:The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional "silicon limit" (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit RSP-BV trade-off. Numerical TCAD (technology computer-aided design) simulations were carried out to comparatively study the proposed MOSFET, the conventional power MOSFET, and the superjunction MOSFET. All the devices were designed with the same breakdown voltage of ~550 V. The proposed MOSFET features a deep trench between neighboring p-bodies and multiple p-islands located at the sidewall and bottom of the trench. The proposed MOSFET allows a high doping concentration in the drift region, which significantly reduces its RSP compared to the conventional power MOSFET. The multiple p-islands split the electric field into multiple peaks and help the proposed MOSFET maintain a similar breakdown voltage to the conventional power MOSFET with the same drift region thickness. Another famous device technology, the superjunction MOSFET (SJ-MOSFET), also breaks the 1D-limit. However, the SJ-MOSFET suffers a snappy reverse recovery performance, which is a notorious drawback of SJ-MOSFET and limits the range of its application. On the contrary, the proposed MOSFET presents a superior reverse recovery performance and can be used in various power switching applications where hard commutation is required.
Dielectric Layer Field Enhancement for High Voltage SOI Devices

李肇基,张波,罗小蓉,胡盛东

DOI: https://doi.org/10.3969/j.issn.1000-100x.2008.12.014

IF: 5.967

2008-01-01

IEEE Transactions on Power Electronics

Abstract:Vertical breakdown voltage improvement is the bottleneck of SOI high voltage.Our team has researched on this for many years,and summarized the theory and technology of enhanced dielectric layer field (ENDIF),in which break-down voltage is increased by enhancing dielectric layer electric field.Three approaches which can enhance dielectric layer electric field are given:implementing the interface charges between silicon and dielectric layer;introducing low permittivity (LK) dielectric into buried layer and enhancing the critical electric field in silicon at the interface of Si/dielectric layer by using a thin silicon layer.Based on ENDIF,a series of SOI high voltage device structures is proposed:SOI high voltage de-vice structure with charge mode,SOI high voltage device structure with low k dielectric buried layer and thin Si layer SOI high voltage device structure with step drift region.Analytical models for the electric field and the breakdown voltage have been developed and the breakdown voltage larger than 700V is obtained in SOI LDMOS with double-side trench on 20μm SOI layer and 1μm buried oxide layer.
Super-Junction Components

陈星弼

DOI: https://doi.org/10.3969/j.issn.1000-100x.2008.12.002

2008-01-01

Abstract:The background of the invention of the super-junction structure,which breaks the silicon limits of the tradi-tional device are presented.The realationships of the specific on-resistance and the breakdown voltage are described for some detail arrangements of the structure.The device physics in transient of turn-on process of super-junction MOST are presented.Finally,the progress of super-junction devices is discussed briefly.
Novel Homogenization Field Technology in Lateral Power Devices

Bo Zhang,Wentong Zhang,Jian Zu,Ming Qiao,Sen Zhang,Zhili Zhang,Boyong He,Zhaoji Li

DOI: https://doi.org/10.1109/led.2020.3023688

IF: 4.8157

2020-11-01

IEEE Electron Device Letters

Abstract:A novel Homogenization Field Technology (HOFT) in lateral power devices is proposed and experimentally proved in this letter. By introducing the periodically discrete metal insulator semiconductor (MIS) structure, which realizes periodic equal potential and self-charge balance, the HOFT obtains almost uniform surface and bulk electric field distributions in the voltage sustaining layer. Therefore, the new device harvests both higher breakdown voltage VB and lower specific on-resistance Ron,sp than those of the conventional reduced surface field (RESURF) technology in much higher and wider doping dose range. The experiment of the HOFT device realized a VB of 672 V and a Ron,sp of 56.7 $text{m}Omega ~cdot $ cm2 under a high doping dose of $5.6times 10^{{12}}$ cm−2, which represents a reduction of 33.8% when compared with the theoretical value of the triple RESURF technology.

engineering, electrical & electronic
Vertical GaN MOSFET Power Devices

Catherine Langpoklakpam,An-Chen Liu,Yi-Kai Hsiao,Chun-Hsiung Lin,Hao-Chung Kuo

DOI: https://doi.org/10.3390/mi14101937

2023-10-16

Abstract:Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Li Liu,Qing Guo,Jue Wang,Miaoguang Bai,Junze Li,Na Ren,Kuang Sheng

DOI: https://doi.org/10.1109/ted.2024.3354874

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:This work demonstrates 4H-SiC high voltage lateral MOSFETs with double-reduced surface fields (RESURFs) technology. The device design has been performed to balance electric field distribution and to enhance the blocking capability. Consequently, the experimental results show a significant improvement in breakdown voltage (BV), with the highest BV reaching 1800 V. A Baliga's figure of merit (BFOM) of 128 MW/cm2 has been achieved, which is the best performance among the reported SiC lateral MOSFETs. Detailed analysis are, furthermore, conducted to study the effects of the p-top RESURF length and the drift region length on both on- and blocking-performance. The device capacitance characteristics are also presented. These 4H-SiC lateral MOSFETs can be attractive candidates for power IC applications.

engineering, electrical & electronic,physics, applied
Research and Development of Power VDMOS Devices

Yang Faming,Yang Fashun,Zhang Zheyuan,Li Xucheng,Zhang Rongfen,Deng Chaoyong

DOI: https://doi.org/10.3969/j.issn.1671-4776.2011.10.002

2011-01-01

Abstract:The research status and the development history of the vertical-double-diffusion power MOSFET(VDMOS) are introduced briefly.The working principle and structure characteristic of several new devices(including trench VDMOS,super junction VDMOS,semi-superjunction VDMOS),as well as problems in manufacturing process which is in the light of contradiction between the breakdown voltage and the conduction resistance of power VDMOS devices are introduced.The advantages and disadvantages of different device structures are compared and analyzed.The characteristics of the new derivatives structures(including poly flanked VDMOS,oxide-bypassed VDMOS and floating islands VDMOS)are analyzed.The newest application progress of the new SiC materials on the VDMOS devices is shown,and the existing problems and development tendency in the future are presented.
Theory of a Novel Voltage-Sustaining Layer for Power Devices

XB Chen,PA Mawby,K Board,CAT Salama

DOI: https://doi.org/10.1016/s0026-2692(98)00065-2

1998-01-01

Abstract:The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and Ron and the sustaining voltage VB can be shown to be Ron=2.53 × 10−7bVB1.23 ωcm2, where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.
Design and Optimization of Power Devices in A Bcd Process

Fan Xu,Chunxiao Fu,Yuhua Cheng

DOI: https://doi.org/10.1149/1.3360614

2010-01-01

ECS Transactions

Abstract:We present the results of design and optimization of high-voltage devices (170V) in a novel 0.35um BCD process. This process is based on a 0.35um BCD process. Process parameter optimization and device structures have been designed after detailed TCAD simulation and experimental device characterization. Several approaches such as adjusting field plate and optimizing LDD structure have been tried to improve breakdown voltage of the devices. By analyzing experiment results from several process splits, designs of 170V high voltage devices have been finalized. Good performance and very competitive specific on-resistances of devices after optimizition have been achieved.
Recent progress of SiC power devices and applications

Lijuan Li,Canbing Li,Yijia Cao,Feng Wang

DOI: https://doi.org/10.1002/tee.21888

IF: 0.923

2013-07-31

IEEJ Transactions on Electrical and Electronic Engineering

Abstract:Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advantages and potential for energy savings and emission reduction in the coming years. In this paper, the research on SiC material and device technologies, the benefits, and some remaining issues are discussed. Recent progress (since 2007) in applications such as DC–DC, AC–DC, DC–AC, and AC–AC converters is discussed. Also, future applications and perspectives are analyzed. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

engineering, electrical & electronic
Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability

Stephan Wirths,Yulieth Arango,Andrei Mihaila,Marco Bellini,Gianpaolo Romano,Giovanni Alfieri,Manuel Belanche,Lars Knoll,Enea Bianda,Elena Mengotti

DOI: https://doi.org/10.1109/ispsd46842.2020.9170122

2020-09-01

Abstract:Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We present results using our high-k gate stack technology that shows significantly reduced density of interface states (Dit) along with superior threshold voltage (VTH) stability for low voltage SiC power MOSFETs. The findings indicate virtually no VTH-shift during static characterization as function of the starting gate voltage and its ramp. Furthermore, dynamic switching results show virtually no threshold voltage shift for $V_{GS,start} \gt -12$V.
A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped Regions

Xb Chen,X Wang,Jko Sin

DOI: https://doi.org/10.1109/16.842974

IF: 3.1

2000-01-01

IEEE Transactions on Electron Devices

Abstract:A novel high-voltage sustaining structure with buried oppositely doped regions is demonstrated. Due to the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar conduction) can be reduced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimensional (2-D) simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than the value given by the conventional "silicon limit".

Breakthrough to the "silicon Limit" of Power Devices

Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

Ultra-Fast Ligbts And Superjunction Devices In Membrane Technology

New "silicon Limit" of Power Devices

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Recent Progress in SiC and GaN Power Devices

Theory of a novel voltage sustaining (CB) layer for power devices

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

Dielectric Layer Field Enhancement for High Voltage SOI Devices

Super-Junction Components

Novel Homogenization Field Technology in Lateral Power Devices

Vertical GaN MOSFET Power Devices

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Research and Development of Power VDMOS Devices

Theory of a Novel Voltage-Sustaining Layer for Power Devices

Design and Optimization of Power Devices in A Bcd Process

Recent progress of SiC power devices and applications

Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability

A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped Regions