Study of the metallization and interface reaction between diamond film and Ti layer by AES

Bin Zheng,Yongfa Zhu,Wenqing Yao,Hequan Wang,LiLi Cao,Weimin Hu
1998-01-01
Abstract:Ti layer with a thickness of 250 nm was successfully deposited on the surface of a diamond thin film by using a RF magnetron sputtering technique. The interface reaction between Ti and diamond was promoted by vacuum annealing at the range of 300 °C to 600 °C. The Auger profile results show that the width of interface layer is more than 600 nm. The formation of TiC layer at the interface is confirmed by C KLL line shape. There is a strong chemical bond in the interface of Ti/diamond. The activation energy of diffusion reaction is 12.3 kJ/mol. Ti layer is seriously oxidized when the annealing temperature reaches 600 °C.
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