Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

Suppression of Absolute Instability by Elastic Scattering in Semiconductor Superlattices

Suppressed absolute negative conductance and generation of high-frequency radiation in semiconductor superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

THE DISLOCATION MODEL OF SUPERLATTICE AND DYNAMIC STABILITIES OF THE SYSTEM

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Structural stability of SiGe/Si strained-layer superlattices

Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile

Theory of spatially inhomogneous Bloch oscillations in semiconductor superlattices

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Two-Dimensional Molecular Dynamics Simulation of the Thermal Conductance of Superlattices

The role of lattice thermal conductivity suppression by dopants from a holistic perspective

Localization Driven Superradiant Instability.

Diffusion Approximation of a Scattering Matrix Model of a Semiconductor Superlattice.

Electronic Structure of Diluted Magnetic Semiconductor Superlattices: In-Plane Magnetic Field Effect

Unravelling Ultralow Thermal Conductivity in Double Perovskite Cs2AgBiBr6: Dominant Wave-like Phonon Tunnelling, Strong Quartic Anharmonicity and Lattice Instability

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Impact of Acoustic and Optical Phonons on the Anisotropic Heat Conduction in Novel C-Based Superlattices