Contamination resistance of Pd coated Ti thin film in hydrogen absorption

Qiangji Zhang,Xiyong Fu,Qihong Qi,Pengji Zhao,Guoliang Zhai,Fangming Mou
1997-01-01
Abstract:An attempt is made to solve the problem of lowering hydrogen absorption capability by the surface contamination of Ti film. The Pd coated (by deposition or sputtering) Ti film may considerably improve the hydrogen absorption capability after exposing to carbon and oxygen contaminants. The electron density of state (DOS) near Fermi level has a peak structure for samples with high hydrogen absorption capability. Little change is found in the DOS peak structure of the contamination resisting Pd/Ti samples, whereas the peak vanishes for samples without Pd because of contamination.
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