Abstract:Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Measurement Of Doping Concentration In Boron-Doped Diamond Film From Capacitance Spectroscopy

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study

Optical and Electrical Characterization of Boron-Doped Diamond

Accurate FTIR determination of boron concentration in CVD homoepitaxial diamond layers

Effects of boron doping on the growth characteristic of diamond film

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

Optical properties of boron-doped diamond

The superconductivity in boron-doped polycrystalline diamond thick films

Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode Dc Chemical Vapor Deposition

Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process

Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

Effect of boron doping on luminescent properties of silicon--vacancy and germanium--vacancy color centers in diamond particles obtained by chemical vapor deposition

Thermal Diffusion Boron Doping of Single-Crystal Diamond

Influence of the Boron-Doped Layer on the Secondary Electron Emission and Morphology of Diamond Film

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy