Abstract:The method of proximity photolithography is a practical and available way in the manufacture of grating and radial encode. One of the mast important factors of this way is lithographic gap. That is the distance from mask to surface of photoresist coated on ruled blank. The size of it affects the ruling quality directly, such as causing edge scattering. Because of the existing near-field Fresnel diffraction, it's impossible to obtain the ruling which is the same as the mask even if on the first focal plane of Fresnel (Tabolt effect). As it's very difficult to produce the exact parallel light in usual optical system, the actual image we get isn't an ideal self-image. Therefore, a better position of the mask should be found in order to ensure the ruling quality. The relationship between image contrast and lithographic gap is deduced in the view of image contrast in this paper. According to the relation, range of practical lithographic gap is obtained. Thus, a reliable basis is provided for selecting the best gap in actual photolithography.

Relationship Between Ruling Quality and Lithographic Gap in Proximity Photolithography