Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Cathodoluminescence of Diamond Synthesized from Silicon-Carbide

[Preliminary Study on the Unique Spectroscopic Characteristics of Natural and Synthetic Diamonds].

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Luminescent diamond composites

Metal-Insulator-Vacuum Type Electron Emission from N-Containing Chemical Vapor Deposited Diamond

Low-Threshold Cold Cathodes Made Of Nitrogen-Doped Chemical-Vapour-Deposited Diamond

Revealing impurity evolution in silicon-doped diamond film via thermal oxidation

Electrical excitation of silicon-vacancy centers in single crystal diamond

Synthesis of Luminescent Eu defects in diamond

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

Vacancy–impurity centers in diamond: prospects for synthesis and applications

Diamond semiconductor and elastic strain engineering

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy

Research progress of optoelectronic devices based on diamond materials

Optical properties of silicon-implanted polycrystalline diamond membranes

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Marker in the Near Infrared

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device