Abstract:We present detailed numerical simulations to clarify the important role that the nonuniformity of the transverse optical mode plays for the high-speed response of oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The comprehensive laser diode simulator, Minilase, as well as a one-dimensional rate equation model are used as simulation tools. It is demonstrated that, due to the nonuniform optical intensity, carriers at different locations in the quantum well have different stimulated recombination rates, and therefore exhibit different dynamic responses to small signal modulation. This nonuniformity causes an overdamping of the relaxation oscillation, as well as a low-frequency roll-off of the modulation response. Due to this nonlinear effect, the intrinsic maximum bandwidth of VCSELs with oxide confined apertures is shown to be much smaller than predicted by the conventional rate equation model which assumes uniform optical intensity. We further demonstrate that this damping effect can be greatly reduced by restricting the current injection to be well within the transverse optical field. This is achievable by using tapered oxides to make the electrical aperture smaller than the optical aperture, and thereby improves the modulation bandwidth significantly.

Carrier Lifetime and High — Speed Modulation of Semiconductor Lasers

Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-Level Model in Spice

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Effects of High Carrier Densities on Phonon and Carrier Lifetimes in Si by Time-Resolved Anti-Stokes Raman Scattering

Modulation System and Modulation Characteristics of High Power Semiconductor Laser

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Rate‐equation‐based Circuit Model of High‐speed Semiconductor Lasers

Q-modulated Semiconductor Laser

Proposal for $Q$ -Modulated Semiconductor Laser

A numerical model for semiconductor laser diodes

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Trade-off Between Optical Modulation Amplitude and Modulation Bandwidth of Silicon Micro-Ring Modulators.

Effect of nonlinear gain/current relation on rate equations of a ultrashort-cavity laser

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

High frequency modulation characteristics of specific wavelength laser diode with narrowband filter