Time-Dependent Ferroelectric Coercive Field After Domain Inversion In Linbo3

Haifeng Wang,Yongyuan Zhu,Shining Zhu,Naiben Ming

DOI: https://doi.org/10.1117/12.252954

1996-01-01

Abstract:It was found that the ferroelectric coercive field of LiNbO 3, both in forward and reverse direction, vary with time after domain inversion. The existence of an internal field decaying as e -t/�� is proposed, and the related coefficients are fitted.

What problem does this paper attempt to address?

Modeling Large Reversible Electric-Field-induced Strain in Ferroelectric Materials Using 90° Orientation Switching

LinXiang Wang,Rong Liu,Roderick V. N. Melnik

DOI: https://doi.org/10.1007/s11431-008-0334-z

2009-01-01

Science China Technological Sciences

Abstract:Reversible large electric-field-induced strain caused by reversible orientation switchings in BaTiO 3 is modeled using the Landau’s theory of phase transition. A triple well free energy function is constructed. Each of its minima is associated with one of the polarization orientations involved. Nonlinear constitutive laws accounting for reversible orientation switchings and electrostriction effects are obtained by using thermodynamic equilibrium conditions. Hysteretic dynamics of one-dimensional structures is described by coupled nonlinear differential equations. Double hysteretic loops in the electric and mechanic fields are both successfully modeled. Giant reversible electrostriction is modeled as a consequence of reversible orientation switchings via electro-mechanical couplings. Comparisons with experimental results reported in literatures are presented.
Investigation of ferroelectric coercive field in LiNbO3

H.F. Wang,Y.Y. Zhu,S.N. Zhu,N.B. Ming

DOI: https://doi.org/10.1007/s003390050605

1997-01-01

Applied Physics A

Abstract:3 using the pulse-field method was performed. It was found that the coercive field varies with time after domain reversal. The possible origins of this phenomenon are discussed.
E-Field Tuning Microwave Frequency Performance Of Co2fesi/Lead Zinc Niobate-Lead Titanate Magnetoelectric Coupling Composites

Shandong Li,Ming Liu,Jing Lou,Shawn Beguhn,Jianpeng Wu,Jie Qiu,Jianhua Lin,Zhiyi Cai,Yi Hu,Feng Xu,Jenqgong Duh,nian x sun

DOI: https://doi.org/10.1063/1.3670979

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Nanocrystalline Co2FeSi Heusler alloy films were deposited on single crystal lead zinc niobate-lead titanate substrates. It is revealed that this multiferroic composite exhibits very strong continuously electric field (E-field) tunable microwave frequency characteristics. With an increase of the E-field intensity from 0 to 6 kV/cm, the ferromagnetic resonance field H-r shifts by 348 Oe along the easy axis direction, being equivalent to 58 Oe cm/kV, and the ferromagnetic resonance frequency f(FMR) dramatically increases from 2.2 to 6.1 GHz with an increment of 3.9 GHz or an increment ratio of 177%; moreover, the damping constant alpha decreases from 0.0150 to 0.0085. These features demonstrate that this multiferroic structure is promising in the fabrication of E-field tunable microwave components. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3670979]
Ferroelectric Domain Inversion in Litao3 Single Crystal by Applying Electric Field

SN Zhu,YY Zhu,ZY Zhang,HF Wang,NB Ming

DOI: https://doi.org/10.1080/00150199708008382

1997-01-01

Ferroelectrics

Abstract:Ferroelectric domain inversion in LiTaO3 single crystal has been achieved at room temperature by applied external electric field. The polarization inversion in the material exhibited different dynamic characteristics under high field (E > 20 kV/mm) and low field (E < 20 kV/mm), respectively. The inversion behaviors under high field have been studied.
Study on Domain Inversion in Linbo3 by Ti-Indiffusion

H Shu,YY Zhu,SN Zhu,ZY Zhang,HF Wang,CZ Ge,NB Ming

DOI: https://doi.org/10.1080/00150199708008383

1997-01-01

Ferroelectrics

Abstract:In this paper, the fabrication of periodic domain inversion on the +C face of LiNbO3 by Ti-indiffusion method has been presented. The influence of different gases and varying heat treatment times on domain inversion has been investigated. The mechanism of domain inversion has been discussed.
Accelerated Domain Switching Speed in Single-Crystal Linbo3 Thin Films

J. Jiang,X. J. Meng,D. Q. Geng,A. Q. Jiang

DOI: https://doi.org/10.1063/1.4914483

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:By using ionic implantation and wafer bonding technologies, we peeled off a single-crystal LiNbO3 thin film in the atomic-layer smoothness from the surface of a bulk Z-cut LiNbO3 single crystal. X-ray diffraction patterns showed only (00l) orientation of the film. From positive-up-negative–down pulse characterization, we measured domain switching current transients under various short-pulse voltages, where we observed domain switching currents to occur separately at time after initial capacitor charging currents. This is similar to early observations in bulk ferroelectric single crystals, where apparent positive/negative coercive fields of domain switching determined from polarization-electric field hysteresis loops always equal maximum/minimum applied fields. However, after pulse stressing of the film for more than 1000 cycles, the domain switching speed is accelerated, where domain switching current overlaps with the initial capacitor charging current with a well-defined coercive field independent of the applied-field strength. Finally, we simulated the whole domain switching current transients with the assumption of the resistance degradation across interfacial passive layers between the film and electrodes.
Domain Reversal And Relaxation In Linbo3 Single Crystals Studied By Piezoresponse Force Microscope

Yi Kan,Xiaomei Lü,XiuMei Wu,Jinsong Zhu

DOI: https://doi.org/10.1063/1.2425034

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The LiNbO3 crystal was polarized and characterized by the piezoresponse force mode of scanning probe microscope. By using the Kolmogorov-Avrami-Ishibashi [Izv. Akad. Nauk, USSR: Ser. Math. 3, 355 (1937); J. Chem. Phys. 8, 212 (1940); J. Phys. Soc. Jpn. 63, 1031 (1994); 63, 1601 (1994)] theory to analyze the relaxation process after domain switching, it was found that (1) the percent of final switched domains after poling increased with the enhancing poling voltage, (2) the nucleation time was a constant to a certain sample, (3) the dimension of domain growth decreased with the enhancing poling voltage, and (4) the relaxation time had a maximum at a medial voltage. The corresponding mechanism for domain switching was discussed, which is hopefully useful for domain engineering. (c) 2006 American Institute of Physics.
Effect of Li Diffusion on the Domain Inversion of Linbo3 Prepared by Vapor Transport Equilibration

YL Chen,JJ Xu,YF Kong,SL Chen,GY Zhang,JP Wen

DOI: https://doi.org/10.1063/1.1494852

IF: 4

2002-01-01

Applied Physics Letters

Abstract:LiNbO 3 crystals with a composition close to stoichiometry were prepared by using a vapor transport equilibration (VTE) technique. The influence of the intrinsic defect density in the electric field periodic poling LiNbO3 crystal is studied. The switching field is found to decrease with the intrinsic defects. The reduction of intrinsic defects is mainly due to a change in the Li/Nb ratio in the LiNbO3 crystal, as a result of lithium diffusion during the VTE process. The switching field of ∼2 kV/mm in stoichiometric LiNbO3 is about one fourth of the previously published results obtained with near-stoichiometric crystals, and is approximately one tenth of the conventional congruent field. Periodic poling of thicker stoichiometric substrates was successfully performed by means of an electric field poling process at room temperature.
Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Jinming Cao,Mengxia Liu,Zhonglei Liu,Hua Hou,Yuhong Zhao

DOI: https://doi.org/10.3390/ma15072506

IF: 3.4

2022-01-01

Materials

Abstract:In this work, atomically K1-xNaxNbO3 thin films are taken as examples to investigate the reversible and irreversible effects in a horizon plane, i.e., the changes of domain structures, phase states, free energies, etc., under a z-axis alternating current field via a phase-field method. The simulation results show the driving forces during the charging and discharging process, where there is a variation for the angles of the domain walls from 180 degrees to 90 degrees (and then an increase to 135 degrees), which are the external electric field and domain wall evolution, respectively. As for the phase states, there is a transformation between the orthorhombic and rhombohedral phases which can't be explained by the traditional polarization switching theory. This work provides a reasonable understanding of the alternating current field effect, which is essential in information and energy storage.
Study on the Formation Mechanism of A Complex-Domain Structure in Linbo3

ZY ZHANG,YY ZHU,SN ZHU,H SHU,HF WANG,JF HONG,CZ GE,NB MING

DOI: https://doi.org/10.1063/1.359502

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:A complex domain structure in LiNbO3 is fabricated by proton exchange followed by heat treatment. Domain inversion at the +c and −c faces as well as reinversion in the inverted region near the +c surface are observed experimentally. The proton and lithium concentrations are measured by secondary ion mass spectroscopy. It is found that the proton profile peaks away from the surface due to indiffusion and outdiffusion. The domain inversion mechanism is discussed. An internal electric field model is proposed which is based on the concentration gradient of proton and lithium deficiency.
Domain switching emission from the mixed-mode crack in ferroelectrics by birefringence measurement and phase field modeling

Qun Li,Suxin Pan,Qida Liu,Jie Wang

DOI: https://doi.org/10.1088/0964-1726/25/7/07LT01

IF: 4.1

2016-01-01

Smart Materials and Structures

Abstract:The spatial and temporal evolution of domain switching near the tip of a mixed-mode crack (e.g., an inclined crack) is observed in ferroelectrics. The birefringence technique is used to measure the optical quantities to demonstrate the domain switching near the crack tip. The results show an intriguing feature that there appears electrical creep and domain switching emission from the crack tip. The actual time-dependence of domain switching emission and its anisotropic velocity is approximately measured. Moreover, the phase field modeling is developed to simulate polarization distribution and domain switching near the crack tip where the time-dependent Ginzburg-Landau equation is used to describe the change of polarization. The phase field results indicate the same features of domain switching emission from the mixed-mode crack. A good agreement between phase field simulation and birefringence measurement is concluded by setting the appropriate kinetic coefficient in the time-dependent Ginzburg-Landau equation.
Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Guang-hao Shao,Yu-hang Bai,Guo-xin Cui,Chen Li,Xiang-biao Qiu,De-qiang Geng,Di Wu,Yan-qing Lu

DOI: https://doi.org/10.1063/1.4959197

IF: 1.697

2016-07-01

AIP Advances

Abstract:Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Domain inversion in LiNbO3 and LiTaO3 induced by proton exchange

Zhi-Yong Zhang,Yong-yuan Zhu,Hai-feng Wang,Lu-chun Wang,Shi-ning Zhu,Nai-ben Ming

DOI: https://doi.org/10.1016/j.physb.2007.05.011

2007-01-01

Abstract:This review paper reports the studies on ferroelectric domain inversion and inverse mechanism in ferroelectric and dielectric LiNbO3 and LiTaO3 single crystals by proton exchange followed by heat treatment. Secondary ion mass spectroscopy and numerical simulation of proton profile, differential scanning calorimetry, pyroelectric experiment and transmission electron microscopy were used to characterize the domain inversion. The inverse mechanism was discussed by means of an internal electric field model, which is based on the concentration gradient of proton and lithium deficiency.
Room Temperature Ferromagnetism and Ferroelectricity in Cobalt-Doped Linbo3 Film

Cheng Song,Changzheng Wang,Xuejing Liu,Fei Zeng,Feng Pan

DOI: https://doi.org/10.1063/1.2952772

IF: 4

2008-01-01

Applied Physics Letters

Abstract:( 5 at. % ) cobalt-doped LiNbO3 (Co:LN) films were prepared by combinatorial laser molecular-beam epitaxy on Si (100). The Co:LN films with Co2+ replacing Nb exhibit room temperature ferromagnetism of 1.2μB∕Co and Curie temperature of ∼540K. Through a Ag∕Co:LN∕Si metal-ferroelectric-semiconductor field effect transistor configuration, ferroelectric measurements show that the films display hysteresis loops at 300K and ferroelectric transition temperature of ∼610K. The hysteresis and the asymmetry in capacitance-voltage and leakage-voltage curves are ascribed to trapping/detrapping process of charges at the Co:LN/Si interface. The coexistence of room temperature ferromagnetism and ferroelectricity makes Co:LN a promising single-phase multiferroic.
Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Jie Wang,Zheng Chen,Takahiro Shimada,Takayuki Kitamura

DOI: https://doi.org/10.1016/j.physleta.2013.04.044

IF: 2.707

2013-01-01

Physics Letters A

Abstract:The effect of electrical conductivity on the domain evolution of semiconducting ferroelectrics is investigated using a phase field model which includes the drift of space charges. Phase field simulations show that the tail-to-tail 90° charged domain wall appears during the domain formation in the semiconducting ferroelectrics at zero field, which is prohibited in common insulating ferroelectrics. Due to the screening of polarization charges, the domain switching takes place through the motion of head-to-head 180° charged domain wall in the semiconducting single-domain ferroelectrics subjected to an electric field. Comparing to the insulating ferroelectrics, the semiconducting ferroelectrics have a lower speed of domain evolution due to the decrease of mobility of charged domain walls. The response of semiconducting ferroelectrics to a mechanical load is also found different from that of insulating ferroelectrics.
Formulization of Long-Time Domain Switching Around the Coercive Field from Imprint Measurements on Ferroelectric Thin Films

A. Q. Jiang,J. W. Fei,Y. Y. Lin,T. A. Tang

DOI: https://doi.org/10.1063/1.2948931

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:The time interval for the completion of slow polarization reversal in ferroelectric thin films measured in the order of magnitude of 10−9–100s is broadened by more than two decades as the applied field approaches the coercive field of domain switching. The domain-switching kinetics is conjectured to change from the classical Kolmogorov–Avrami–Ishibashi (KAI) model at high fields to nucleation-limited-switching (NLS) model at low fields. However, the true voltage drop across the film from the real-time measurement of the oscilloscope remains constant at a coercive voltage Vc during polarization reversal irrespective of the applied voltage. Therefore, the above high-field assumption for KAI does not exist. From our measurements, a long-time effect of imprint can occur for any slow processes of physical phenomena, even if the imprint field is very weak. The imprinted Vc can be estimated either from the voltage shift in the curve of switched polarization versus the applied voltage or directly from the height variation in domain-switching current plateau after an imprint voltage Vimp for time timp (1μs0 to exhibit a linear time dependence in a logarithmic scale above an initial time on the order of 1.0μs, even if under Vimp
Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Anquan Jiang,Yinyin Lin,Tingao Tang

DOI: https://doi.org/10.1063/1.2733640

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:It is found that the voltage drop across a 170-nm-thick Pb(Zr(0.4)Ti(0.6))O(3) film keeps constantly at a well-defined coercive voltage during domain switching, irrespective of the applied voltage and frequency, and that the switching current of domains is reversely proportional to the resistance of loading resistors in the circuit. A simple formalism is derived for the speed of polarization reversal short into a few nanoseconds. The maximum speed of domain switching is limited by the time of compensation charge dissipation via loading resistors in the circuit, instead of reverse domain nucleation and growth. However, in most cases, the switching current decays with time and is thus peaked under different applied voltages, as observed in an 87-nm-thick film. This phenomenon is understood from our work due to the presence of interfacial passive layers that modulate switching current transient through the circuit RC-time constant, besides the consideration of a broad coercive-voltage distribution in a genuine thin film.
Domain-inversion Study of Proton-Exchanged Linbo3 by Means of Transmission Electron Microscopy

ZY Zhang,LC Wang,YY Zhu,NB Ming

DOI: https://doi.org/10.1080/00150199808229555

1998-01-01

Ferroelectrics

Abstract:Domain-inverted region in LiNbO3 single crystal were formed by proton exchange followed by heat treatment. Direct observation of the domain-inverted region is performed by using transmission electron microscopy (TEM). A charged straight 180 degrees domain boundary was revealed and compared with winding domain boundaries in LiNbO3 grown by Czochralski method. Obtained results are significant to study the mechanism of domain inversion and morphology of inversion domains.
Domain Inversion In Linbo3 By Proton-Exchange And Quick Heat-Treatment

Yongyuan Zhu,Shining Zhu,Jingfen Hong,Naiben Ming

DOI: https://doi.org/10.1063/1.112295

IF: 4

1994-01-01

Applied Physics Letters

Abstract:Experimental studies on the domain inversion in LiNbO3 by proton exchange followed by quick heat treatment was performed. The relationship between the inverted depth and the quick heat treatment conditions was investigated. Using this method, a periodically domain - inverted structure was fabricated. The inverted domains are arc shaped.

Time-Dependent Ferroelectric Coercive Field After Domain Inversion In Linbo3

Modeling Large Reversible Electric-Field-induced Strain in Ferroelectric Materials Using 90° Orientation Switching

Investigation of ferroelectric coercive field in LiNbO3

E-Field Tuning Microwave Frequency Performance Of Co2fesi/Lead Zinc Niobate-Lead Titanate Magnetoelectric Coupling Composites

Ferroelectric Domain Inversion in Litao3 Single Crystal by Applying Electric Field

Study on Domain Inversion in Linbo3 by Ti-Indiffusion

Accelerated Domain Switching Speed in Single-Crystal Linbo3 Thin Films

Domain Reversal And Relaxation In Linbo3 Single Crystals Studied By Piezoresponse Force Microscope

Effect of Li Diffusion on the Domain Inversion of Linbo3 Prepared by Vapor Transport Equilibration

Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Study on the Formation Mechanism of A Complex-Domain Structure in Linbo3

Domain switching emission from the mixed-mode crack in ferroelectrics by birefringence measurement and phase field modeling

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Domain inversion in LiNbO3 and LiTaO3 induced by proton exchange

Room Temperature Ferromagnetism and Ferroelectricity in Cobalt-Doped Linbo3 Film

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Formulization of Long-Time Domain Switching Around the Coercive Field from Imprint Measurements on Ferroelectric Thin Films

Interfacial-Layer Modulation Of Domain Switching Current In Ferroelectric Thin Films

Domain-inversion Study of Proton-Exchanged Linbo3 by Means of Transmission Electron Microscopy

Domain Inversion In Linbo3 By Proton-Exchange And Quick Heat-Treatment