Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Study On The Spin-Splitting Of The Energy Band For Strained Superlattices With Three Materials

Spin Splitting of Conduction Subbands in Al0.3ga0.7as/Gaas/Alxga1-X As/Al0.3ga0.7as Step Quantum Wells

Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Energy Subband Structures in Lateral-Surface Superlattices

Valence Band Structures of Gaas/Alas Lateral Superlattices

Band Hybridization and Spin-Splitting in Inas/Alsb/Gasb Type Ii and Broken-Gap Quantum Wells

Spin States in InAs/AlSb/GaSb Semiconductor Quantum Wells

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Spin–orbit coupling in bulk GaAs

Spin-resonant Splitting in Magnetically Modulated Semimagnetic Semiconductor Superlattices

Band Gap and Quantum Valley Hall Edge State in Uniaxial Strain Superlattice of Graphene

Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic states in GaAs/AlAs lateral-surface superlattices

Zero-field Spin Splitting in AlxGa1−xN/GaN Heterostructures with Various Al Compositions

Spin-dependent energy bands and spin polarization in two-dimensional spin-orbit lateral superlattices

Electronic Band-Structure Engineering of GaAs/AlxGa1−xAs Quantum Well Superlattices with Substructures