A STUDY ON TEMPERATURE COEFFICIENT OF RESISTIVITY OF MoSix FILMS AND LOCALIZATION OF ELECTRONS

Wang X
1995-01-01
Abstract:The sheet resistances of MoSi2 thin films with different compositions, obtained by multilayer sputtering, were measured as a function of annealing temperature. X-ray diffraction and scanning electron microscopy were used, to determine the structure and surface morphology, The results indicate that the change of sheet resistance depends on composition of the films. The temprerature coefficients of resistivity (TCR) of the two films, MoSi0.6 and MoSi2, were investigated and the results show that the films annealed at lower temperatures exhibit negative TCR. this is in relation to localization of electrons in disordered system.
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