Abstract:Two-dimensional (Mo,W)Te-2 films have recently attracted significant research interest as electronic device channel materials, topological insulators and Weyl semimetals. However, one critical concern that can hamper their diverse applications is surface chemical instability due to weak Mo(W)-Te bond energy reflected in the small electronegativity difference between Mo(W) and Te, which fundamentally induces unpredictable surface oxidation and remarkably affects the film electrical transport. Here, for the first time, we clarify an anomalous oxidation featuring an unbalanced oxidation process in large-area, few-layer 1T'-MoTe2, which originates from the surface chemical instability. We identify the oxidation temperature, oxygen flow rate, structural polymorphism, and atomic chemical bond electronegativity that dominate preferential surface oxidation, which can be monitored by the appearance and decomposition of Raman-active Te metalloids. Importantly, we verify the formation of an ultrathin natural amorphous MoO3-TeO2 surface layer with an approximate self-limiting thickness that significantly affects the transport properties of the underlying few-layer 1T'-MoTe2 film. We also reveal a similar oxidation tendency in few-layer 2H-MoTe2 and 1T'-WTe2 but with a higher resistance to oxidation than 1T'-MoTe2 due to their inherent phase stability. Our findings not only represent a strong advancement in understanding surface chemical instability of atomically thin 2D TMDC materials, but also highlight technically essential importance of constructing ultrathin natural oxide dielectrics/TMDC interfaces with a controllable surface oxidation process for atomically thin TMDC-based devices.

Observation of Weak Anti-Localization and Electron-Electron Interaction on Few-Layer 1T′-Mote 2 Thin Films

Electron-electron Interactions and Weak Antilocalization in Few-Layer ZrTe5 Devices

Giant enhancement of superconductivity in few layers MoTe 2

One-dimensional Weak Antilocalization Effect in 1T′-Mote2 Nanowires Grown by Chemical Vapor Deposition

Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2

Giant enhancement of superconductivity in few layers MoTe<sub>2</sub>*

Altshuler-Aronov-Spivak Interference of One-Dimensional Helical Edge States in MoTe2

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Electron-electron interactions and weak antilocalization in few-layer Zr Te 5 devices

Bandgap opening in MoTe 2 thin flakes induced by surface oxidation

Temperature-driven Emergence of Negative Photoconductivity in Semimetal MoTe2 Film Probed with Terahertz Spectroscopy

Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2

Possible Unconventional Two-Band Superconductivity in MoTe2

High temperature Raman investigation of few-layer MoTe2

Mobility Spectrum Analytical Approach For The Type-Ii Weyl Semimetal T-D-Mote2

Weak Antilocalization in the Transition Metal Telluride Ta2Pd3Te5

Possible unconventional two-band superconductivity in Mo Te 2

The origin of the turn-on phenomenon in Td-MoTe2

Coexistence of superconductivity and weak anti-localization at KTaO3 (111) interfaces

Anomalous Oxidation and Its Effect on Electrical Transport Originating from Surface Chemical Instability in Large-Area, Few-Layer 1T '-Mote2 Films

Extremely Large Magnetoresistance in the Type-Ii Weyl Semimetalmote2