Mobility Spectrum Analytical Approach For The Type-Ii Weyl Semimetal T-D-Mote2

Qijun Pei,Xiaomin Luo,Fenghua Chen,Hui Lv,Y.P. Sun,W. Lu,P. Tong,Z. G. Sheng,Yun-Hu Han,W. H. Song,X. B. Zhu,Y. P. Sun

DOI: https://doi.org/10.1063/1.5008850

IF: 4

2018-01-01

Applied Physics Letters

Abstract:The extreme magnetoresistance (XMR) in orthorhombic W/MoTe2 arises from the combination of the perfect electron-hole (e-h) compensation effect and the unique orbital texture topology, which have comprised an intriguing research field in materials physics. Herein, we apply a special analytical approach as a function of mobility (l-spectrum) without any hypothesis. Based on the interpretations of longitudinal and transverse electric transport of T-d-MoTe2, the types and the numbers of carriers can be obtained. There are three observations: the large residual resistivity ratio can be observed in the MoTe2 single crystal sample, which indicates that the studied crystal is of high quality; we observed three electron-pockets and three hole-ones from the l-spectrum and that the ratio of h/e is much less than 1, which shows that MoTe2 is more e-like; different from the separated peaks obtained from the hole-like l-spectrum, those of the electron-like one are continuous, which may indicate the topological feature of electron-pockets in T-d-MoTe2. The present results may provide an important clue to understanding the mechanism of the XMR effect in T-d-MoTe2. Published by AIP Publishing.