Abstract:Context: This study explores the impact of deformation on the electrical and optical characteristics of monolayer cadmium telluride (MoTe2) with vacancies, using the foundational principles of density functional theory. It was discovered that both strain and imperfections alter the electrical characteristics of monolayer MoTe2. Under VTe-MoTe2, a direct-to-indirect band-gap transition occurs. In DTe-MoTe2, the band-gap value reduces dramatically, the conduction band changes downward, and the carrier concentration rises. The DVTe-induced band gap state is closer to the Fermi energy level than the VTe-induced band gap state. In this paper, DTe-MoTe2 is chosen for tensile deformation. The results show that the band-gap value tends to decrease by increasing tensile deformation. When the stretching value reaches 10%, the lower bound of the conduction band and the top of the valence band overlap, and the system is converted from a semiconductor to a metal. Considering the density of states, the missing state MoTe2 is mainly contributed by the participation of Te-s, Te-p, and Mo-d orbitals. In terms of optical qualities, the absorption and reflection peaks are red-shifted and blue-shifted, respectively. It is hoped that these effects on the optoelectronic properties will be widely applied. Methods: In this study, we utilize the generalized gradient approximation plane-wave pseudopotential method, incorporating Perdew-Burke Ernzerhof (PBE) generalized functions and following the fundamental principles of the density functional theory framework. A 3 × 3 × 1 supercell was constructed as an undoped model based on a MoTe2 monolayer, which consists of 9 Mo atoms and 18 Te atoms. The vacuum flat plate was set to 15 Å along the z-direction to avoid interactions between the monolayers. For electronic structure calculations, the energy cutoff was set to 450 eV. Each model's computational process and structural optimization were carried out using the Monkhorst-Pack specialized K-point sampling approach. Crystal optimization computations used a 3 × 3 × 1 Monkhorst-Pack K-point grid for molybdenum ditelluride monolayers and a 9 × 9 × 1 K-point grid for electronic system analysis, analyzing state density and optical characteristics, respectively. For the structural optimization, the convergence requirements for maximum force, maximum atom displacement, maximum stress, and energy change were defined at 0.03 eV/Å, 0.001 Å, 0.05 Gpa, and 1.0 × 10-5 eV/atom, respectively.

Giant anisotropic photocurrent modulated by strain in type-II Weyl semimetal Td-MoTe2

Giant Anisotropic Photocurrent Modulated by Strain in Weyl Semimetal Td-MoTe2.

Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Strain modulation of photocurrent in Weyl semimetal TaIrTe4

Highly anisotropic Drude-weight-reduction and enhanced linear-dichroism in van der Waals Weyl semimetal Td-MoTe2 with coherent interlayer electronic transport

Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

Non-centrosymmetric Weyl Semimetal State and Strain Effect in the Twisted-Brick Phase Transition Metal Monochalcogenides.

Mobility Spectrum Analytical Approach For The Type-Ii Weyl Semimetal T-D-Mote2

Observation of Robust Charge Transfer under Strain Engineering in Two-Dimensional MoS2-WSe2 Heterostructures

Anisotropic Raman Scattering and Mobility in Monolayer 1T D -Res 2 Controlled by Strain Engineering

Dimensionality-dependent type-II Weyl semimetal state in Mo 0.25 W 0.75 Te 2

Dimensionality-dependent Type-Ii Weyl Semimetal State in Mo0.25W0.75Te2

Tuning the Electrical Transport of Type II Weyl Semimetal WTe2 Nanodevices by Mo Doping

Strain modulation of the transport properties of Weyl semimetal TaAs

Effect of strain on the photoelectric properties of molybdenum ditelluride under vacancy defects: a DFT investigation

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers

Low-energy excitations in type-II Weyl semimetal Td-MoTe2 evidenced through optical conductivity

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Tensile Strain-Controlled Photogenerated Carrier Dynamics at the Van Der Waals Heterostructure Interface