Observation of Robust Charge Transfer under Strain Engineering in Two-Dimensional MoS2-WSe2 Heterostructures

Shu-Wen Zheng,Hai-Yu Wang,Lei Wang,Yang Luo,Bing-Rong Gao,Hong-Bo Sun
DOI: https://doi.org/10.1039/d1nr02014e
IF: 6.7
2021-01-01
Nanoscale
Abstract:Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported in theoretical and steady-state spectroscopic studies. However, the strain effects on the charge transfer processes in TMDC heterostructures have not been experimentally addressed thus far. Here, we systematically investigate the strain-mediated transient spectral evolutions corresponding to excitons at band-edge and higher energy states for monolayer MoS2 and monolayer WSe2. It is demonstrated that Γ and K valleys in monolayer WSe2 and monolayer MoS2 present different strain responses, according to the broadband femtosecond pump-probe experimental results. It is further observed that the resulting band offset changes tuned by applied tensile strains in MoS2-WSe2 heterostructures would not affect the band-edge electron transfer profiles, where only monolayer WSe2 is excited. From a flexible optoelectronic applications perspective, the robust charge transfer under strain engineering in TMDC heterostructures is very advantageous.
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