Fabrication of silicon-on-insulator (SOI) wavelength demultiplexer

Cezhou Zhao,Guozheng Li,Enke Liu,Xiding Liu,Yong Gao
1995-01-01
Abstract:The SOI wavelength demultiplexers were developed by using the large cross-section single-mode rib waveguides theory and the two-mode interference principle. Their fabrication process is as follows: firstly, the SOI waveguides are prepared by direct bonding the silicon chip and then polishing their back to a desired thickness; secondly, the waveguides are anisotropically etched by KOH to obtain the SOI wavelength demultiplexers. The test results show that their insertion loss is of 4.81dB and crosstalk is less than -18.6dB at wavelength of 1.3 ��m.
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