Abstract:We present a three-dimensional particle-based computer simulation of high-power impulse magnetron sputtering (HiPIMS) discharges which enables us to simulate the transport of atoms and ions in the discharge and the corresponding plasma parameters. The simulation requires a definition of the plasma potential and electron density distribution (not calculated self-consistently), for which parametric analytical formulae were devised. A numerical algorithm is used to constrain the simulation by an experimental target current waveform, which ensures that the simulation results are closely tied to the experimental discharge conditions. Simulations of a HiPIMS discharge with Ti target show the capability to calculate the spatial distributions of target material atoms and ions and also to quantify the process gas rarefaction. We evaluated, among others, the ion return probability and the ionized fraction of the target material flux onto the substrate for various values of the potential difference across the magnetic presheath in front of the target racetrack, which is responsible for attracting most of the plasma ions towards the target. It is shown that this parameter of the plasma potential distribution strongly affects the ion return probability and, thus, it must be known quite precisely to reliably predict the ionized flux fraction on the substrate. Other parameters, such as the composition of the ion flux onto the target are less sensitive. The simulation can be run in a reasonably short time and can easily be extended by adding more plasma species (excited states or doubly ionized species) and their interactions.

Energy and Angle Distributions of Ions Striking A Spherical Target in Plasma Source Ion-Implantation

Modeling of incident particle energy distribution in plasma immersion ion implantation

Numerical Studies of Collisionless and Collisional Sheath Evolution in Plasma Source Ion Implantations

Simulation and Dose Uniformity Analysis of Plasma Based Ion Implantation

2D Particle-in-cell Simulation of Plasma Immersion Ion Implantation and Dose Distribution

Study on the Treatment Capability of A Plasma-Based Ion Implanting Trench-Shaped Target

Numerical Research on Plasma Generation and Expansion into Vacuum

Simulation of trench homogeneity in plasma immersion ion implantation

Model of Intense Pulsed Ion Beam and Simulation Study of Energy Deposited on Target

Measured and Calculated Retained Dose with Different Process Parameters in Plasma Based Ion Implantation

Hybrid particle-in-cell (PIC) ions and Boltzmann electron distribution simulation of direct-current plasma immersion ion implantation into three-dimensional objects

The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

Ion Acceleration by Ultra-Intense Laser Pulse Interacting with Double-Layer Near-Critical Density Plasma

Particle-based simulation of atom and ion transport in HiPIMS: effect of the plasma potential distribution on the ionized flux fraction

Distribution and Evolution of Thermal Field Induced by Intense Pulsed Ion B Eam on Thin Metal Target

Theoretical Study on Dose Distributions of the Ball Bearing Treated by Plasma Immersion Ion Implantation

Investigation of Ion Energy Distributions with Two Positive Ions in a Dual-Frequency Sheath of Plasma Etching

Propagation of Plasma Generated by Intense Pulsed Ion Beam Irradiation

Charging Effects on Temporal and Spatial Evolution of the Dusty Plasma Sheath in Plasma Source Ion Implantation

Simulation of Energy Absorbed by Target with Intense Pulsed Ion Beam Model