Abstract:Bismuth ferrite (BiFeO(3)) nanocrystalline films with the crystalline size of 27-40 nm have been grown on c-sapphire substrates under various oxygen pressures of 1 × 10(-4) to 1 Pa by pulsed laser deposition. The X-ray diffraction spectra show that the films are polycrystalline and present the pure rhombohedral phase. It was found that the Raman-active phonon mode E(TO1) shifts towards a higher energy side from 74 to 76 cm(-1) with increasing oxygen pressure, indicating a larger tensile stress in the films deposited at higher oxygen pressure. The X-ray photoelectron spectroscopy analysis suggests that the concentrations of both Fe(2+) ions and oxygen vacancies in the BiFeO(3) films increase with decreasing oxygen pressure. Moreover, the dielectric functions in the photon energy range of 0.47-6.5 eV have been extracted by fitting the transmittance spectra with the Tauc-Lorentz dispersion model. From the transmittance spectra, the fundamental absorption edge is observed to present a redshift trend with increasing the temperature from 8 to 300 K. Note that the optical band gap (E(g)) decreases with increasing the temperature due to the electron-phonon interactions associated with the interatomic distance in the BiFeO(3) films. However, the E(g) decreases from 2.88 to 2.78 eV with decreasing oxygen pressure at 8 K, which can be attributed to the increment of oxygen vacancies leading to the formation of some impurity states between the valence and conduction band. It can be concluded that the oxygen pressure during the film fabrication has the significant effects on microstructure, optical properties, and electronic band structure modification of the BiFeO(3) films.

Effect of Cooling Oxygen Pressure on the Photoconductivity in Bi0.9La0.1FeO3 Thin Films

Oxygen Vacancies Induced Enhancement of Photoconductivity of La0.5Sr0.5CoO3 −δthin Film

Influences of oxygen pressure on optical properties and interband electronic transitions in multiferroic bismuth ferrite nanocrystalline films grown by pulsed laser deposition.

The effects of the oxygen content on the photoelectrochemical properties of LaFeO3 perovskite thin films obtained by pulsed laser deposition

The Effects of Oxygen in Spinel Oxide Li1+xTi2-xO4-delta Thin Films

Enhancement of Oxygen Vacancies Induced Photovoltaic Effects in Bi<sub>0.9</sub>La<sub>0.1</sub>FeO<sub>3</sub> Thin Films

Effect Of Bias Current On The Resisitivity And Photoconductivity Of Oxygen-Deficient La2/3sr1/3mno3-Delta Thin Films

The effect of in situ annealing oxygen pressure on the ferroelectric resistive switching characteristic

Oxygen Pressure Dependence Of Structure And Electrical Properties Of Pulsed Laser Deposited Ba(Fe(1/2)Nb(1/2))O(3) Thin Films

Effects of oxygen content on the transport property of La0.7Ce0.3MnO3+δ film

Effects of Substrate Temperature and Oxygen Pressure on Microstructures and Conductivity of Ba0.95La0.05PbO3 Thin Films

Oxygen Vacancy Mediated Conductivity and Charge Transport Properties of Epitaxial Ba0.6La0.4TiO3- Thin Films

Influence Of Oxygen Pressure On Structures And Electrical Properties Of Lead-Free (K0.44na0.52li0.04)(Nb0.86ta0.10sb0.04)O3 Thin Films Deposited By Pulsed Laser Deposition

The effects of oxygen in spinel oxide Li 1+x Ti 2−x O 4−δ thin films

Oxygen-vacancy-related relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (La,Mg-codoped BiFeO3) ferroelectric thin film

Influences of La on Optical and Electric Properties of BiFeO3 Thin Films

Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn-Doped BiFeO 3 Thin Films

Effects of Chemical Fluctuations on Microstructures and Properties of Multiferroic Bifeo3 Thin Films

Effect Of Oxygen Vacancies On The Microstructure And Multiferroic Behavior Of Bi-4.La-25(O).Fe-75(O).Co-5(O).Ti-5(3).O-15 Ceramics

Temperature-dependent Effect of Oxygen Vacancy on Polarization Switching of Ferroelectric Bi3.25La0.75Ti3O12 Thin Films

Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La0.7Sr0.3MnO3/Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 thin-film capacitors