Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Realizing A Family of Transition-Metal-Oxide Memristors Based on Volatile Resistive Switching at A Rectifying Metal/Oxide Interface

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Metal/TiO 2 Interfaces for Memristive Switches

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Nonvolatile Behavior of Resistive Switching Memory in Ag/WOx/TiOy/ITO Device Based on WOx/TiOy Heterojunction

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Ab Initio Modeling Of Resistive Switching Mechanism In Binary Metal Oxides

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution (Adv. Mater. 41/2023)

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Memristors for Memory and Computing Applications

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Interfacial Redox Processes in Memristive Devices Based on Valence Change and Electrochemical Metallization.