Abstract:International Journal of Modern Physics B, Ahead of Print. This study began by preparing gallium oxide (Ga2O3) doped with zinc fluoride (ZnF2) and manufacturing a target material. Subsequently, electron beam (e-beam) deposition was employed to coat silicon substrates with the prepared material. Different heat treatment conditions were applied to the deposited films, followed by material and electrical property analyses. The investigation explored the impact of pre-sintering Ga2O3 at 950°C to transform it into a more stable [math]-phase. For comparative purposes, some samples underwent annealing at 600°C in a nitrogen–hydrogen (95% N[math] H2, abbreviated as N[math]) mixed gas, which was used as a reduction atmosphere, to increase oxygen vacancies in the ZnF2-doped Ga2O3 thin films and consequently enhance their conductivity. The deposited ZnF2-doped Ga2O3 thin films initially exhibited an amorphous phase, with diffraction peaks appearing only after a 600°C annealing process. Pre-sintering Ga2O3 powder at 950°C promoted the emergence of the [math]-phase, and the bandgap value increased after annealing. Measurements using B1500A revealed that sintering and annealing ZnF2-doped Ga2O3 thin films were essential steps to enhance their conductivity. X-ray photoelectron spectroscopy (XPS) further confirmed a significant correlation between the conductivity variation and the concentration of oxygen vacancies. Additionally, it was observed that the use of an N[math] mixed gas further increased the presence of oxygen vacancies in the films. The results of this study provide an important method to make Ga2O3 thin films with conductivity, which can be utilized in the fabrication of Ga2O3 thin-film-based semiconductor devices in the future.

Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs

Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation

Effect of a ZnO Buffer Layer on the Properties of Epitaxial ZnO:Ga Films Deposited on C-Sapphire Substrate

Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability

The Interface Properties of La2o3/Gaas System by Surface Passivation

Synthesis of N-Type ZrO2 Doped Ε-Ga2o3 Thin Films by PLD and Fabrication of Schottky Diode

Microstructure and Electrical Properties of Al2O3–ZrO2 Composite Films for Gate Dielectric Applications

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications

Pulsed Laser Deposited Zralon Films for High-K Gate Dielectric Applications

Impacts of Oxygen Source on Band Alignment of ALD Al2O3/(α-, Ε-)Ga2o3 Interface

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films

Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Characterization of Gadolinium Oxide Film by Pulse Laser Deposition

Investigations of the growth and physical characteristics of ZNF2-DOPED GA2O3 thin films

Atomic-resolved Structural and Electric Field Analysis of the Passivation Interface of MIS-HEMTs