Abstract:Bi2Te3-based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi2Te3-Bi2Se3-Bi2S3 composites can be used for mid-temperature power generation under 500 °C. Herein, we investigated the thermoelectric properties of (CuI) y (Bi2Te3)0.95-x (Bi2Se3) x (Bi2S3)0.05 (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi2Te3)0.95-x (Bi2Se3) x (Bi2S3)0.05 (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi2Te3)0.95-x (Bi2Se3) x (Bi2S3)0.05 showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI)0.003(Bi2Te3)0.95-x (Bi2Se3) x (Bi2S3)0.05 (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi2Te3)0.75(Bi2Se3)0.2(Bi2S3)0.05, which was comparatively high for n-type thermoelectric materials in the mid-temperature range.

Thermoelectric Properties of Quaternary (bi, Sb)(2)(Te, Se)(3) Compound

Enhanced Thermoelectric Performance of (Sb0.75bi0.25)(2)te-3 Compound from First-Principles Calculations

High-temperature thermoelectric properties with Th$_{3-x}$Te$_4$

Thermoelectric Properties of Quaternary Ag-Bi-Sb-Te Alloys

Are Cu2Te‐Based Compounds Excellent Thermoelectric Materials?

Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) y (Bi2Te3)0.95- x (Bi2Se3) x (Bi2S3)0.05 quaternary system

Cu$_2$ZnSiTe$_4$: A potential thermoelectric material with promising electronic transport

Thermoelectric Performance of Binary Lithium-Based Compounds: Li3Sb and Li3Bi

Thermoelectric performance of binary lithium-based compounds: Li 3 Sb and Li 3 Bi

Thermoelectric Transport Properties of AgmPb100BimSe100+2m System

Theoretical Investigation on Thermoelectric Properties of Cu-Based Chalcopyrite Compounds

Thermoelectric performance of (AgBiTe2)1-x(SnTe)x with stable cubic enabled by enhanced configurational entropy

Quantum Chemistry Calculation And Transport Of Bi2te3 And Sb2te3

First-Principles Calculations of Thermoelectric Transport Properties of Quaternary and Ternary Bulk Chalcogenide Crystals

First-principles investigation on the thermoelectric performance of half-Heusler compound CuLiX(X = Se, Te)

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Nanostructuring and improved performance of ternary Bi–Sb–Te thermoelectric materials

Bi8Se7: Delocalized Interlayer π-Bond Interactions Enhancing Carrier Mobility and Thermoelectric Performance near Room Temperature

Electronic Structure and Thermoelectric Properties of Bi2Te3 Crystals and Graphene-Doped Bi2Te3

BiSbSe3: A promising Te-free thermoelectric material

Electronic Transport and Thermoelectric Properties of Te-Doped Tetrahedrites Cu12Sb4-yTeyS13