Abstract:Low-dimensional gallium nitride (GaN) nanoderivatives have recently attracted great attention, and they are one of the most attractive fields for future development of microelectronic devices. Here, the electronic structures and transport properties of GaN nanoderivatives were investigated by density functional theory. For two-dimensional bilayer GaN nanosheets, we found that AA-NN(GaGa) is the most stable structure among the five GaN stacking structures, and the stacking arrangement does not change the wide and indirect band gap of these two-dimensional bilayer stacked nanosheets. The transport properties of one-dimensional GaN nanoribbons were also investigated. The current in the bilayer GaN nanodevices was about twice that in the monolayer GaN nanodevices regardless of the nanoribbon morphology. That is, the bilayer GaN nanodevices show the current superposition law, like a parallel circuit, compared with their respective monolayer GaN model devices. The one-dimensional armchair boundary GaN nanoribbon devices showed the width effect because the width had a great effect on the current-voltage (I-V) curve and transport characteristics, but the one-dimensional zigzag boundary GaN nanoribbon devices did not and the I-V characteristic curves for different nanoribbon widths were similar. These extraordinary electronic structures indicate that GaN is promising for application in microelectronic devices.

First-Principles Study on the Structural Stability and Electronic Properties of Aln/Gan Heterostructure Nanoribbons

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Stable Metallic 1T‐WS2 Nanoribbons Intercalated with Ammonia Ions: the Correlation Between Structure and Electrical/Optical Properties

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Comparative study on stability and electronic properties of two-dimensional AlxGa1−xN/GaN heterostructure with variable Al contents

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Electronic structures and transport properties of low-dimensional GaN nanoderivatives: A first-principles study

First principles study on modulating electronic and optical properties with h-BN intercalation in AlN/MoS 2 heterostructure

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires

First Principal Calculations on the Electronic Structure and the Optical Properties of Al-doped Zigzag GaN Nanotube

First-principles study on the vertical heterostructure of the BSe and AlN monolayers

Electronic Structures Of Algan2 Nanotubes And Aln-Gan Nanotube Superlattice

Fundamental properties of Alkali-intercalated bilayer graphene nanoribbons

Fundamental properties alkali-intercalated bilayer graphene nanoribbons

Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study

Tuning the electronic and optical properties of two-dimensional GaN/AlGaN heterostructure by vacancy defect

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons

Experimental Evidence Of Large Bandgap Energy In Atomically Thin Aln

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes