Surface Sensitivity of Secondary Electrons Emitted from Amorphous Solids: Calculation of Mean Escape Depth by a Monte Carlo Method
Y. B. Zou,S. F. Mao,B. Da,Z. J. Ding
DOI: https://doi.org/10.1063/1.4972196
IF: 2.877
2016-01-01
Journal of Applied Physics
Abstract:A Monte Carlo simulation method for study of electron-solid interaction based on modeling of cascade secondary electron (SE) production and transportation has been used to determine the escape depth of emitted SE signals from amorphous solid specimens. The excitation depth distribution function and emission depth distribution function for, respectively, excited and emitted SEs are obtained at first based on the continuous medium approximation, whose product yields the secondary electron depth distribution function from which the mean escape depth (MED) of SEs is calculated. In this work, we study systematically the dependence of the MED on the atomic number of the specimen, primary energy, and incident angle of the incident electron beam. The derived MEDs of SEs for C, Ni, Cu, Ag, Pt, and Au specimens are found surprisingly to fall into a shallow sub-nanometer region, i.e., 0.4–0.9 nm, while Al and Si present larger values, due to elastic scattering effects. Furthermore, SE energy-depth distributions indicate that lower-energy SEs are escaped mainly from the greater depth region under the surface whereas higher-energy SEs are from the near-surface region. The results hence show that the SE emission is dominated by very thin top-surface layers in most cases, leading to the surface sensitivity of SEs.