Abstract:Graphene islands are subjected to different compressive strains from the opposite copper crystal plane after growing across the twin boundary. The monotonically changed graphene doping across different twin boundaries with unique spatial distribution is observed. This work is expected to have a potential impact on the growth of high‐quality graphene on twinned copper substrates. Twin crystals, the formation energy of which is much smaller than that of ordinary grain boundaries, widely exist in the annealed copper and are hard to eliminate. The study of the effects of twin boundaries on graphene growth is of great significance to the understanding of graphene epitaxy. However, there are few studies on the effects of twin boundaries on the graphene growth process. Here, this article experimentally demonstrates that graphene islands are subjected to different compressive strains from the opposite copper crystal plane after growing across the twin boundary. Further results reveal that graphene can grow across different twin boundaries, such as atom steps, narrow valleys, and even micron‐scale ridges, without forming linear defect. Therefore, strain‐induced graphene doping can be manipulated with the type of twin boundaries and the location on the twin crystals. The transition region where the degree of doping changes monotonically across the twin boundary further confirms the different spatial doping phenomena of graphene islands. This work provides a new perspective for understanding the effect of twin boundaries on the graphene epitaxy, which is expected to have a potential impact on growing high‐quality graphene on twinned copper substrates.

Crystal Structure Evolution Of Individual Graphene Islands During Cvd Growth On Copper Foil

Size dependence of the Graphene Islands Moving on Cu (111) Surface during the CVD Growth

Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High-Resolution Scanning Tunneling Microscopy.

Structural Evolution and Growth Mechanism of Graphene Domains on Copper Foil by Ambient Pressure Chemical Vapor Deposition

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Effects Of Thermally-Induced Changes Of Cu Grains On Domain Structure And Electrical Performance Of Cvd-Grown Graphene

Effects of Surface Topology on the Formation of Oxide Islands on Cu Surfaces

Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

Graphene Growth across the Twin Boundaries of Copper Substrate

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Growth of large-area aligned pentagonal graphene domains on high-index copper surfaces

Growth Intermediates For Cvd Graphene On Cu(111): Carbon Clusters And Defective Graphene

Formation of Multilayer Cu Islands Embedded Beneath the Surface of Graphite: Characterization and Fundamental Insights

Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Elementary Process for CVD Graphene on Cu(110): Size-selective Carbon Clusters

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates