Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

Growth of large-area aligned pentagonal graphene domains on high-index copper surfaces

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Synthesis of Well-Aligned Millimeter-Sized Tetragon-Shaped Graphene Domains by Tuning the Copper Substrate Orientation

Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

Structural Evolution and Growth Mechanism of Graphene Domains on Copper Foil by Ambient Pressure Chemical Vapor Deposition

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

Relationship between graphene nucleation density and epitaxial growth orientation on Cu(111) surfaces

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Suppression of Graphene Nucleation by Plasma Treatment of Cu Foil for the Rapid Growth of Large-Size Single-Crystal Graphene

Rapid Growth of Angle-Confined Large-Domain Graphene Bicrystals

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Slip‐line‐guided Growth of Graphene

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth