Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Lei Yang,Jiecai Han,Jiaqi Zhu,Yuankun Zhu,Hermann Iñaki Schlaberg

DOI: https://doi.org/10.1016/j.materresbull.2013.07.039

IF: 5.6

2013-01-01

Materials Research Bulletin

Abstract:IR transmittance of various transparent conductive materials (RYO films grown under RT, 400°C and 600°C, ITO films [2], Carbon Nano tube films [11], metal/dielectric multilayers [12]).

What problem does this paper attempt to address?

Synthesis Science Of Srruo3 And Caruo3 Epitaxial Films With High Residual Resistivity Ratios

Hari P. Nair,Yang Liu,Jacob P. Ruf,Nathaniel J. Schreiber,Shun-Li Shang,David J. Baek,Berit H. Goodge,Lena F. Kourkoutis,Zi-Kui Liu,Kyle M. Shen,Darrell G. Schlom

DOI: https://doi.org/10.1063/1.5023477

IF: 6.6351

2018-01-01

APL Materials

Abstract:Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (rho 300 K/rho 4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE. (C) 2018 Author(s).
Yttrium Oxide Thin Films Prepared under Different Oxygen-Content Atmospheres: Microstructure and Optical Properties

Pei Lei,Jiaqi Zhu,Yuankun Zhu,Chunzhu Jiang,Xunbo Yin

DOI: https://doi.org/10.1007/s00339-012-6940-4

2012-01-01

Abstract:Yttrium oxide films were prepared on silicon wafers by reactive magnetron sputtering at different oxygen flow rates to investigate the microstructure and optical properties for desirable planar optical waveguiding applications. Under the different conditions of target surface, the deposition rate, structure, and optical properties have great changes. The deposition rate increases to the maximum, and then monotonically decreases. Oxygen content in films increases and the composition of films transforms from stoichiometry to an oxygen-rich state. Y 2 O 3 films grow with the (222) preferred growth orientation at low oxygen flow rate, and then turn into the (622) orientation; the microstructure evolves from crystal structure to amorphous state as oxygen flow rate increases from 2 to 12 sccm. Sufficient oxygen makes films low-order structure and oxygen-rich films have poor crystallinity. Very smooth film has been obtained at oxygen flow rate of 12 sccm. The refractive index can be greatly modulated by the oxygen-content factor. It is convincing that the controllable structure and optical properties of Y 2 O 3 films can be achieved by adjustment the oxygen flow rate for desired optical design and applications.
Influence of annealing on microstructure and electrochromic properties of WO3 thin film

Feng Rao,Gaorong Han

2004-01-01

Abstract:WO3 films, grown by electron beam evaporation on indium tin oxide (ITO) coated glass substrates, were annealed at a temperature ranging from 250°C to 550°C, for different time intervals of 1-4 hours in air. Its microstructures were characterized with X-ray diffraction (XRD). The results show that annealing strongly affects the crystallinity and electrochromic properties of the WO3 films. Possible mechanisms were also tentatively discussed.
Transparent electric conductive films for optoelectronic devices

Peifu Gu,Xu Liu,Zhidong Zheng,Haifeng Li,Jinfa Tang

1995-01-01

Abstract:The mechanism and preparation as well as experimental results of indium tin-oxide (ITO) transparent electric conductive films with very low resistivity of 1.5��10-4 ��cm and high transmittance of 88-90% have been presented. The influence of some parameters on the resistivity and transmittance has been discussed.
Ca2RuO4 Thin Film Growth by Pulsed Laser Deposition

Wang Xu,Xin Yan,Lee Hanoh,Stampe Patricia A.,Kennedy Robin J.,Zhou Zhixian,Zheng Jim P.

DOI: https://doi.org/10.1557/PROC-819-N3.16

2020-01-01

MRS Proceedings

Abstract:Bulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.
Highly Conductive RuO$_2$ Thin Films from Novel Facile Aqueous Chemical Solution Deposition

Martina Angermann,Georg Jakopic,Christine Prietl,Thomas Griesser,Klaus Reichmann,Marco Deluca

DOI: https://doi.org/10.1007/s10971-023-06221-8

2023-09-20

Abstract:Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as the thermal stability of the thin films have been characterized. The microstructure of the thin films strongly depends on the annealing temperature: A smooth thin film was achieved at an annealing temperature of 600$^\circ$C. Higher annealing temperatures (800$^\circ$C) led to radial grain growth and an inhomogeneous thin film. A very low resistivity of 0.89 {\Omega}m was measured for a 220 nm-thick thin film prepared at 600$^\circ$. The resistivity of the thin films increases with temperature, which indicates metallic behavior. Phase-purity of the thin films was confirmed with X-ray Diffraction (XRD) measurements, X-ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy. Transmission and reflectivity measurements indicate that RuO$_2$ efficiently blocks the UV-VIS and IR wavelengths. The optical constants determined via spectroscopic ellipsometry show high absorption in the near-IR region as well as a lower one in the UV-VIS region. The thermal stability was investigated by post-annealing, confirming that the thin films are stable up to 750$^\circ$C in synthetic air.

Materials Science,Chemical Physics
New insights into the photochromic mechanism in oxygen-containing yttrium hydride thin films: an optical perspective

J. Montero,F. A. Martinsen,S. Zh. Karazhanov,B. C. Hauback,E. S. Marstein

DOI: https://doi.org/10.48550/arXiv.1609.01054

2016-09-05

Materials Science

Abstract:Oxygen-containing yttrium hydride thin films exhibit a photochromic behavior: transparent thin films switch from a transparent state to a photodarkened state after being illuminated with UV or blue light. This feature has attracted much attention in recent years due to its potential applications in smart fenestration or in any device in which a response to intense light radiation is needed. However, the process responsible for the reversible change of the optical properties upon illumination is still not well understood. The objective of the present work is to shed some light on the photochromic mechanism by using an optical approach. On this basis, the optical properties of oxygen-containing yttrium hydride thin films have been studied by optical spectrophotometry and ellipsometry before (transparent state) and after UV illumination (dark state). According to the observed results, the photochromic optical change of the films can be explained quantitatively by the gradual growth, under illumination, of metallic phases within the initial wide-band gap semiconducting lattice.
Evolution of composition, microstructure and optical properties of yttrium oxide thin films with substrate temperature

Lei Pei,Zhu Jiaqi,Zhu Yuankun,Jiang Chunzhu,Yin Xunbo

DOI: https://doi.org/10.1016/j.surfcoat.2012.03.074

IF: 4.865

2013-01-01

Surface and Coatings Technology

Abstract:A series of yttrium oxide films has been fabricated on Si (100) wafers by different substrate temperatures based on reactive magnetron sputtering technology. And the evolution of composition, microstructure and optical properties of Y2O3 films has been investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and spectroscopic ellipsometry (SE). It is shown that stoichiometric Y2O3 with much strong YO bond and cubic nanophase with larger size notably enhance the optical properties, especially refractive index. At low substrate temperature, the composition of Y2O3 films has nonstoichiometry feature accompanying with much physisorbed oxygen (Oδ) compared with these at high temperature. Increasing substrate temperature promotes the formation of YO bonds, approaching the stoichiometry with lower Oδ content. The film commences crystallizing at room temperature, and transformation of crystalline phase from monoclinic to cubic occurs, along with preferred (111) orientation and large grain as temperature increases. The results facilitate clear relationship between the characterizations of Y2O3 film and growth parameters, also, it can be realized that adjustment of optical constants of Y2O3 films in a large range having the aid of substrate temperature to obtain desirable composition and structure for optical applications.
The Tunable Dielectric Properties of Sputtered Yttrium Oxide Films

Lei Pei,Chen Xiaoting,Yan Yue,Zhu Jiaqi

DOI: https://doi.org/10.1007/s00339-021-04280-8

2021-01-01

Applied Physics A

Abstract:Yttrium oxide film is an important dielectric material, which has been widely used in the scientific and engineering fields. The microstructures of yttrium oxide films can be modified effectively by adjusting the substrate temperature and bias voltage, which also have effects on dielectric properties of yttrium oxide films. In this work, the dielectric properties of yttrium oxide films grown on Pt film, which exhibit the distinct microstructures with cubic-phase and monoclinic-phase domination manipulated by different substrate temperatures and bias voltages, have been investigated systematically. High substrate temperature as well as large bias voltage can decrease the loss tangent and enhance the dielectric constants up to 56 and 40, respectively. Furthermore, the driven force of temperature is more favorable than that of bias voltage for enhanced dielectric constant due to fewer defects.
Annealing Effects on the Interband Transition and Optical Constants of Ruthenium (IV) Oxide (RuO2) and Ruthenium (VIII) Oxide (RuO4) Nano Thin Films in Cancer Cells, Tissues and Tumors under Synchrotron and Synchrocyclotron Radiations

Alireza Heidari,Margaret Hotz,Nancy MacDonald,Victoria Peterson,Angela Caissutti,Elizabeth Besana,Jennifer Esposito,Katrina Schmitt,Ling-Yu Chan,Francesca Sherwood,Maria Henderson,Jimmy Kimmel

DOI: https://doi.org/10.36811/ijho.2021.110011

2021-08-09

Instant Journal of Hematology and Oncology

Abstract:In the current research, annealing effects on the interband transition and optical constants of Ruthenium (IV) Oxide (RuO?) and Ruthenium (VIII) Oxide (RuO4) nano thin films in cancer cells, tissues and tumors under synchrotron and synchrocyclotron radiations is investigated. The calculation of thickness and optical constants of Ruthenium (IV) Oxide (RuO2) and Ruthenium (VIII) Oxide (RuO4) annealing effects on the interband transition and optical constants of Ruthenium (IV) Oxide (RuO2) and Ruthenium (VIII) Oxide (RuO4) nano thin films in cancer cells, tissues and tumors under synchrotron and synchrocyclotron radiations produced using sol-gel method over glassy medium through a single reflection spectrum is presented. To obtain an appropriate fit for reflection spectrum, the classic Drude-Lorentz model for parametric di-electric function is used. The best fitting parameters are determined to simulate the reflection spectrum using Lovenberg-Marquardt optimization method. The simulated reflectivity from the derived optical constants and thickness are in good agreement with experimental results. Keywords: Annealing, Interband Transition; Optical Constants; Ruthenium (IV) Oxide (RuO2) and Ruthenium (VIII) Oxide (RuO4); Nano Thin Films; Cancer Cells; Tissues and Tumors; Synchrotron and Synchrocyclotron Radiations
Emergent weak antilocalization and wide-temperature-range electronic phase diagram in epitaxial RuO2thin film

Jin Liu,Lei Gao,Yu Ting Zou,Ting Lin,Ming Tong Zhu,Xiang Yu Lyu,Chao Lu,Yu Qian Wang,Ai Ling Ji,Qing Hua Zhang,Zhi Gang Cheng,Lin Gu,Ze Xian Cao,Nian Peng Lu

DOI: https://doi.org/10.1088/1361-648X/ace2a5

2023-07-10

Abstract:Binary ruthenium dioxide (RuO2) has gradually attracted much attention in condensed matter physics and material sciences due to its various intriguing physical properties, such as strain-induced superconductivity, anomalous Hall effect, collinear anti-ferromagnetism, etc. However, its complex emergent electronic states and the corresponding phase diagram over a wide temperature range remain unexplored, which is critically important to understanding the underlying physics and exploring its final physical properties and functionalities. Here, through optimizing the growth conditions by using versatile pulsed laser deposition, high-quality epitaxial RuO2thin films with clear lattice structure are obtained, upon which the electronic transport is investigated, and emergent electronic states and the relevant physical properties are unveiled. Firstly, at a high-temperature range, it is the Bloch-Grüneisen state, instead of the common Fermi liquid metallic state, that dominates the electrical transport behavior. Moreover, the recently reported anomalous Hall effect is also revealed, which confirms the presence of the Berry phase in the energy band structure. More excitingly, we find that above the superconductivity transition temperature, a new positive magnetic resistance quantum coherent state with an unusual dip as well as an angel-dependent critical magnetic field emerges, which can be attributed to the weak antilocalization effect. Lastly, the complex phase diagram with multiple intriguing emergent electronic states over a wide temperature range is mapped. The results greatly promote the fundamental physics understanding of the binary oxide RuO2and provide guidelines for its practical applications and functionalities.
Spectroscopic investigations on trivalent ruthenium ions in ruthenium perovskite oxide thin films

S. Nakata,R. Takahashi,R. Matsumoto,L.-F. Zhang,H. Sumida,S. Suzuki,T. C. Fujita,M. Kawasaki,H. Wadati

DOI: https://doi.org/10.1063/5.0206279

IF: 4

2024-05-13

Applied Physics Letters

Abstract:The d5 electron configurations under the crystal field, spin–orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru4+ state (4d4) is usually stable in these materials. In this regard, Ru3+ ions in perovskite materials are expected to be a mesmerizing playground of 4d5 electron configurations. Here, we report measurements of x-ray photoemission spectroscopy on recently synthesized perovskite ruthenium oxide thin films, LaRuO3 and NdRuO3, whose valence state of the ruthenium ions is trivalent. We discuss correlation and spin–orbit effects from the valence band spectra, in particular an additional peak structure around 3–5 eV, reminiscent of the so-called 3 eV peak observed in Sr2RuO4. Moreover, we find that the core-level spectra of these materials are quantitatively different from those in other ruthenates, which possess Ru4+ ions, e.g., SrRuO3. We therefore argue that the core level spectra of LaRuO3 and NdRuO3 are peculiar to the Ru3+ states.

physics, applied
Electrical and optical properties of ITO and ITO:Zr transparent conducting films

Bo Zhang,Xianping Dong,Xiaofeng Xu,Xinjian Wang,Jiansheng Wu

DOI: https://doi.org/10.1016/j.mssp.2008.03.003

IF: 4.1

2007-01-01

Materials Science in Semiconductor Processing

Abstract:ITO and ITO:Zr films were deposited on glass substrates by magnetron sputtering. Electrical and optical properties of the films at different experiment parameters such as substrate temperature, oxygen flow rate and annealing temperature were contrastively studied. The increase in substrate temperature remarkably improves the electrical and optical properties of the films. ITO:Zr films show better quality at low substrate temperature. The excessive oxygen can worsen the optical properties of the films. Better optical–electrical properties of the films can be achieved after the proper annealing treatment. Obvious Burstin–Moss effect can be revealed by transmittance spectra with different parameters, and the direct transition models show the change of optical band gap. ITO:Zr films prepared by co-sputtering show better optical–electrical properties than ITO films.
Structural transformations and desirable electronic properties of low-temperature grown ruthenium oxide films under nitrogen atmosphere

Chuanwei Huang,Peiqi Qiu,Sicong Wei,Xierong Zeng,Sixia Hu,Yalin Lu,Shusheng Pan,Haoliang Huang

DOI: https://doi.org/10.1016/j.ceramint.2020.07.098

IF: 5.532

2020-11-01

Ceramics International

Abstract:Sr2RuO4 has recently attracted intense attentions for its intriguing physical properties. However, the ultra-high growth temperature (≥1000 °C) poses a major challenge for fabricating high-quality Sr2RuO4 films. In sharp contrast to effort previously attempted in traditional oxygen atmosphere, herein, a nitrogen gas is employed to grow ruthenium oxide films during pulsed laser depositions (PLD). It is shown that the present method facilitates a successive SrRuO3–Sr2RuO4 structural transformation via increasing growth temperatures from 700 °C to 900 °C. The high-quality Sr2RuO4 film grown at a relative low deposition temperature exhibits a comparable electrical resistivity, in comparison with counterparts deposited at oxygen atmosphere. Combined X-ray photoelectron and X-ray absorption measurements suggest that the nonreactive nitrogen atmosphere involved during the deposition yields a relative lower kinetic energy of laser ablated plume reaching to substrates, and effectively regulates structural and electronic properties of ruthenium oxide films. These findings may offer a new route for synthesizing other oxide functional films with high deposition-temperature.

materials science, ceramics
High-conductivity BaRuO3 thin film and its preparation by pulsed laser deposition

Huaping Xu,Huoping Xin,Lirong Zheng,Chenglu Lin

1996-01-01

Abstract:Ruthenate is a typical complex transition metal oxide of ABO3 type, which possesses metallic conductivity. Its film can be used as electrode material in integrated ferroelectric devices, etc. In this paper, the Perovskitic structure and conducting mechanism of BaRuO3 were analyzed. Perovskite BaRuO3 thin films of low resistivity with ��110�� orientation have been successfully prepared on Si ��100�� substrate by ArF a excimer pulsed laser deposition (PLD) accompanied with subsequent annealing. Both Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) showed that the film was pure and with good compositional homogeneity while there formed an intermediate diffusion layer between BaRuO3 and Si-substrate.
Optoelectronic Properties of Tio2 Films Prepared by Microplasma Oxidation Method

Wang Song,Wu Xiaohong,Qin Wei,Jiang Zhaohua

DOI: https://doi.org/10.1016/j.matlet.2007.07.047

IF: 3

2008-01-01

Materials Letters

Abstract:Thin titanium dioxide films have been prepared on titanium plates by the microplasma oxidation method in a sulfuric acid solution. The TiO2 films were sensitized with a cis-RuL2(SCN)(2) (L = cis-2, 2'-bipyridine-4, 4'-dicarboxlic acid) ruthenium and implemented into a dye-sensitized solar cell. The influence of voltage (150, 170, 190 and 210 V) on the microstructure of the films were investigated by X-ray diffraction, scanning electron microscopy and X-ray Photoelectricity spectroscopy. The photoelectric properties of the TiO2 films prepared at 190 V were relatively higher. in the experiment, the photovoltage was 700 mV, the photocurrent was 115 mu A/cm(2) and the overall efficiency was 0.075%. (c) 2007 Elsevier B.V. All rights reserved.
Composition Change and Capacitance Properties of Ruthenium Oxide Thin Film

Hong Liu,Wei-ping Gan,Zhong-wu Liu,Feng Zheng

DOI: https://doi.org/10.1007/s11771-015-2488-8

2015-01-01

Journal of Central South University

Abstract:RuO2·nH2O film was deposited on tantalum foils by electrodeposition and heat treatment using RuCl3·3H2O as precursor. Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·nH2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2 h, RuO2·nH2O electrode surface gains mass of 2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly 20% with voltage scan rate increasing from 5 to 250 mV/s.
Growth and characterization of yttrium oxide films by reactive magnetron sputtering

Jiaqi Zhu,Yuankun Zhu,Weixia Shen,Yongjie Wang,Jiecai Han,Gui Tian,Pei Lei,Bing Dai

DOI: https://doi.org/10.1016/j.tsf.2011.01.049

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:Yttrium oxide (Y2O3) is a promising ceramic material for electronic and optical applications due to its excellent properties. The purpose of this study is to characterize the effects of deposition parameters on the structure and composition of Y2O3 films. The films are grown on Si substrates by reactive magnetron sputtering at different substrate temperatures and oxygen pressures. The composition and structure of the films are studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. It is shown that the Y2O3 films deposited by reactive magnetron sputtering are mainly cubic phase and polycrystalline. The films are composed of Y–O, Y–O–Si, and Si–O bonds. Increasing substrate temperature induces the monoclinic to cubic phase transition and results in the formation of oxygen vacancies in the film. The preferred growth orientation of Y2O3 film is the (110) plane at low temperature, and it changes to the (111) plane at high temperature. The low temperature is preferable for the formation of Y–O bonds. The oxygen pressure influences on the concentration of Y–O bonds significantly. An optimal oxygen partial pressure for the formation of Y–O bonds exists during the film deposition. In addition, the deposited Y2O3 films exhibit excellent mechanical properties.
Photostriction of Strontium Ruthenate.

Tzu-Chiao Wei,Hsin-Ping Wang,Heng-Jui Liu,Dung-Sheng Tsai,Jr-Jian Ke,Chung-Lun Wu,Yu-Peng Yin,Qian Zhan,Gong-Ru Lin,Ying-Hao Chu,Jr-Hau He

DOI: https://doi.org/10.1038/ncomms15108

IF: 16.6

2017-01-01

Nature Communications

Abstract:Transition metal oxides with a perovskite crystal structure exhibit a variety of physical properties associated with the lattice. Among these materials, strontium ruthenate (SrRuO3) displays unusually strong coupling of charge, spin and lattice degrees of freedom that can give rise to the photostriction, that is, changes in the dimensions of material due to the absorption of light. In this study, we observe a photon-induced strain as high as 1.12% in single domain SrRuO3, which we attribute to a nonequilibrium of phonons that are a result of the strong interaction between the crystalline lattice and electrons excited by light. In addition, these light-induced changes in the SrRuO3 lattice affect its electrical resistance. The observation of both photostriction and photoresistance in SrRuO3 suggests the possibility of utilizing the mechanical and optical functionalities of the material for next-generation optoelectronics, such as remote switches, light-controlled elastic micromotors, microactuators and other optomechanical systems.

Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Synthesis Science Of Srruo3 And Caruo3 Epitaxial Films With High Residual Resistivity Ratios

Yttrium Oxide Thin Films Prepared under Different Oxygen-Content Atmospheres: Microstructure and Optical Properties

Influence of annealing on microstructure and electrochromic properties of WO3 thin film

Transparent electric conductive films for optoelectronic devices

Ca2RuO4 Thin Film Growth by Pulsed Laser Deposition

Highly Conductive RuO$_2$ Thin Films from Novel Facile Aqueous Chemical Solution Deposition

New insights into the photochromic mechanism in oxygen-containing yttrium hydride thin films: an optical perspective

Evolution of composition, microstructure and optical properties of yttrium oxide thin films with substrate temperature

The Tunable Dielectric Properties of Sputtered Yttrium Oxide Films

Annealing Effects on the Interband Transition and Optical Constants of Ruthenium (IV) Oxide (RuO2) and Ruthenium (VIII) Oxide (RuO4) Nano Thin Films in Cancer Cells, Tissues and Tumors under Synchrotron and Synchrocyclotron Radiations

Emergent weak antilocalization and wide-temperature-range electronic phase diagram in epitaxial RuO2thin film

Spectroscopic investigations on trivalent ruthenium ions in ruthenium perovskite oxide thin films

Electrical and optical properties of ITO and ITO:Zr transparent conducting films

Structural transformations and desirable electronic properties of low-temperature grown ruthenium oxide films under nitrogen atmosphere

High-conductivity BaRuO3 thin film and its preparation by pulsed laser deposition

Optoelectronic Properties of Tio2 Films Prepared by Microplasma Oxidation Method

Composition Change and Capacitance Properties of Ruthenium Oxide Thin Film

Growth and characterization of yttrium oxide films by reactive magnetron sputtering

Photostriction of Strontium Ruthenate.