Li-Doped Nimgo Thin Films As A Promising P-Type Transparent Conductive Material with Wide Band-Gap

Ling Cao,Xuyan Li,Dongxiao Wang,Liping Zhu
DOI: https://doi.org/10.1016/j.matlet.2013.07.128
IF: 3
2013-01-01
Materials Letters
Abstract:Transparent conductive p-type Li-doped NiMgO thin films were prepared on quartz substrates by pulsed laser deposition. The effects of oxygen pressure on the properties of the films were investigated. The results demonstrated that the Mg-alloying enhances the transparency of the films and Li-doping improves the conductivity. A minimum resistivity of 19.26Ωcm, with an average optical transmittance higher than 85% in the visible region and a wide band-gap of 3.87eV, was obtained for the film prepared at the oxygen pressure of 5Pa. The p-type conduction of Li-doped NiMgO film was further confirmed by a rectifying Li-doped NiMgO/i-ZnO/Al-doped ZnMgO heterojunction.
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