Effects of Zr Doping on the Microstructures and Dielectric Properties of CaCu3Ti4O12 Ceramics

Q. G. Chi,L. Gao,X. Wang,J. Q. Lin,J. Sun,Q. Q. Lei
DOI: https://doi.org/10.1016/j.jallcom.2013.01.090
IF: 6.2
2013-01-01
Journal of Alloys and Compounds
Abstract:Zr-doped CaCu3Ti3.95Zr0.05O12 (CCTZO) ceramics were prepared by sol-gel method, and pure-phased structures were observed by the X-ray diffraction. The microstructures and dielectric properties of CaCu3Ti4O12 (CCTO) and CCTZO ceramics were investigated. The CCTZO ceramics possessed a fine-grained microstructure with grain sizes of about 3-5 mu m, and the grain size uniformity of CCTZO ceramics were enhanced via doping Zr in CCTO ceramics. Meanwhile, CCTZO ceramics exhibited a broadband stability of the dielectric constant and a lower dielectric loss at high frequency ranges. The dielectric relaxation mechanisms of CCTO and CCTZO ceramics were analyzed using the mixed-valent structures. The impedance analysis suggested CCTO and CCTZO ceramics consisted of semiconducting grains and insulating grain boundaries. (C) 2013 Elsevier B.V. All rights reserved.
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