Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

Gallium nitride based high power-density automotive HID electronic ballast

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

Flexible-controlled high power-density automotive HID electronic ballast using full-digital control mode

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

A GaN HEMT Integrated Power Module with Silver Sintering Processes

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

An Automotive-Use Battery-to-Load GaN-Based Switching Power Converter With Anti-Aliasing MR-SSM and In-Cycle Adaptive ZVS Techniques

Gallium nitride based power switches for next generation of power conversion

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

An Up to 10mhz 6.8% Minimum Duty Ratio GaN Driver with Dual-MOS-Switches Bootstrap and Adaptive Short-Pulse Based High-CMTI Level Shifter Achieving 6.05% Efficiency Improvement

A Gallium Nitride Intelligent Power Module Based on Bonding Wire Interconnection

A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28

10 Kw High Efficiency Compact GaN-Based DC/DC Converter Design

Gallium Nitride Power Devices: A State of the Art Review

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

A review of gallium nitride power device and its applications in motor drive