Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

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Sic Mosfet Zero-Voltage-Switching Svm Controlled Three-Phase Grid Inverter

Implementation of 3.3-kW GaN-Based DC-DC Converter for EV On-Board Charger with Series- Resonant Converter that Employs Combination of Variable-Frequency and Delay-Time Control

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Accurate Evaluation of Commutations of 650 V GaN Power Switches Assisted by Electromagnetic Simulations in a 7 kW Dual Active Bridge Converter for Automotive Battery Charging Applications

Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional On-Board Charger with Integrated 1 kW, 12 V Auxiliary DC-DC Converter with High Power Density

A 2-MHz 9–45-V Input High-Efficiency Three-Switch ZVS Step-Up/-Down Hybrid Converter

Over 300kHz GaN device based resonant bidirectional DCDC converter with integrated magnetics