760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

Huolei Wang,L. Kong,D. Bajek,S. Haggett,Xiaoling Wang,Bifeng Cui,Jiaoqing Pan,Ying Ding,Maria Ana Cataluna
DOI: https://doi.org/10.1364/cleo_qels.2013.jth2a.20
2013-01-01
Abstract:We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ~5 ps. © OSA 2013.
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