Diode-side-pumped Nd:GGG Laser at 1,105 Nm and Frequency-Doubled Laser at 552 Nm
H. B. Shen,Q. P. Wang,Y. X. Zhang,Z. J. Liu,F. Bai,X. X. Chen,Z. H. Cong,L. Gao,W. X. Lan,C. Wang,Y. G. Zhang,Z. G. Wu,W. T. Wang
DOI: https://doi.org/10.1007/s00340-012-5232-1
2012-01-01
Abstract:A high-power diode-side-pumped 1,105 nm Nd:GGG laser and a laser at 552 nm based on intracavity frequency doubling of 1,105 nm laser are demonstrated for the first time. A 26.8-W 1,105 nm laser continuous wave output was achieved under the incident pump power of 170 W. A LiB 3 O 5 crystal is used for second harmonic generation of 1,105 nm laser. When the pump power was 170 W, the average output power at 552 nm of 7.3 W was obtained, corresponding to the optical conversion efficiency of 4.3 %. And the minimum pulse width is 181 ns with the pulse repetition rate of 10 kHz. The M 2 factors are measured to be 19.8 and 17.6 in the horizontal and vertical directions, respectively.