High-pulse-energy III-V-on-silicon-nitride mode-locked laser
Artur Hermans,Kasper Van Gasse,Jon Ø. Kjellman,Charles Caër,Tasuku Nakamura,Yasuhisa Inada,Kazuya Hisada,Taku Hirasawa,Stijn Cuyvers,Sulakshna Kumari,Aleksandrs Marinins,Roelof Jansen,Günther Roelkens,Philippe Soussan,Xavier Rottenberg,Bart Kuyken
DOI: https://doi.org/10.1063/5.0058022
IF: 5.6
2021-09-01
APL Photonics
Abstract:Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V-on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN's low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo-optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 μm, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of ≈2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale.
optics,physics, applied