Abstract:Nitrogen (N)-doped graphene with different atomic percentages (2.3–4.7 at%) of N has been synthesized by thermal annealing of reduced graphene oxide (RGO) in ammonia gas for different times. The effects of annealing time on the structure, electrical and optical properties of N-doped graphene have been systematically investigated by using various analytical techniques. XPS, FTIR, Raman, and XRD studies show that there is a gradual structural change in N-doped graphene sheets with increasing annealing time, resulting from the increase of carbon and simultaneous decrease of oxygen and N contents. High resolution N1s spectra reveal that the pyridine-N and pyrrolic-N contents decrease with increasing annealing time, whereas the amount of quaternary-N increases. Importantly, it has been found that the annealing time caused significant changes in both the electrical and the optical properties of N-doped graphene. The electrical resistance of N-doped graphene is greatly reduced compared to that of GO and RGO, and found to further decrease with increasing annealing time, possibly due to the increase of sp2 carbon networks and decrease of oxygen content as well as defects associated with the incorporation of N. The room-temperature photoluminescence (PL) properties of graphene oxide (GO), RGO and N-doped graphene were systematically studied with regard to the annealing time. The results showed that the PL spectrum of GO exhibits a peak emission maximum at around 700 nm, while that of RGO is found to be strongly blue-shifted with two distinct emission peaks: green emission at 485–500 nm and blue emission at 420–428 nm. For N-doped graphene samples, the blue emission intensity could significantly be enhanced by controlling the annealing time, which leads to a promising blue and green light-emitting material with controllable optical properties.

Synthesis and Photoluminescence of F and N Co-Doped Reduced Graphene Oxide

The Doping of Reduced Graphene Oxide with Nitrogen and Its Effect on the Quenching of the Material’s Photoluminescence

Structure, Bandgap and Photoluminescence of Fluorinated Reduced Graphene Oxide

Photochemical Doping of Graphene Oxide with Nitrogen for Photoluminescence Enhancement

Quenching of Fluorescence of Reduced Graphene Oxide by Nitrogen-Doping

Preparation of Doped Graphene Quantum Dots with Bright and Excitation-Independent Blue Fluorescence

Synthesis and Photoluminescence of Fluorinated Graphene Quantum Dots

Tuning Photoluminescence of Reduced Graphene Oxide Quantum Dots from Blue to Purple

Increased Chemical Enhancement of Raman Spectra for Molecules Adsorbed on Fluorinated Reduced Graphene Oxide

Revealing the Underlying Absorption and Emission Mechanism of Nitrogen Doped Graphene Quantum Dots.

High Fluorescent Sulfur Regulating Graphene Quantum Dots with Tunable Photoluminescence Properties.

Photochemical fluorination of graphitic carbon nitride quantum dots: Fluorescent properties, and their mechanisms

Thermostability, Photoluminescence, and Electrical Properties of Reduced Graphene Oxide–Carbon Nanotube Hybrid Materials

Photochemical Doping of Graphene Oxide Thin Film with Nitrogen for Photoconductivity Enhancement

Two step synthesis of g-C 3 N 4 @GO composites with enhanced photoluminescence response

Significant enhancement of blue emission and electrical conductivity of N-doped graphene

Increased Magnetization of Reduced Graphene Oxide by Nitrogen-Doping

Simultaneous Reduction and N-doping of Graphene Oxides by Low-Energy N2+ Ion Sputtering

Photophysical Properties of Nitrogen-Doped Carbon Quantum Dots Synthesized by Graphite

Synthesis and Upconversion Luminescence of N-Doped Graphene Quantum Dots

Effects of pyridine-like and pyrrolic-like nitrogen on the photoluminescence blue-shift of nitrogen-doped graphene oxide quantum dots