Abstract:Nitrogen (N)-doped graphene with different atomic percentages (2.3–4.7 at%) of N has been synthesized by thermal annealing of reduced graphene oxide (RGO) in ammonia gas for different times. The effects of annealing time on the structure, electrical and optical properties of N-doped graphene have been systematically investigated by using various analytical techniques. XPS, FTIR, Raman, and XRD studies show that there is a gradual structural change in N-doped graphene sheets with increasing annealing time, resulting from the increase of carbon and simultaneous decrease of oxygen and N contents. High resolution N1s spectra reveal that the pyridine-N and pyrrolic-N contents decrease with increasing annealing time, whereas the amount of quaternary-N increases. Importantly, it has been found that the annealing time caused significant changes in both the electrical and the optical properties of N-doped graphene. The electrical resistance of N-doped graphene is greatly reduced compared to that of GO and RGO, and found to further decrease with increasing annealing time, possibly due to the increase of sp2 carbon networks and decrease of oxygen content as well as defects associated with the incorporation of N. The room-temperature photoluminescence (PL) properties of graphene oxide (GO), RGO and N-doped graphene were systematically studied with regard to the annealing time. The results showed that the PL spectrum of GO exhibits a peak emission maximum at around 700 nm, while that of RGO is found to be strongly blue-shifted with two distinct emission peaks: green emission at 485–500 nm and blue emission at 420–428 nm. For N-doped graphene samples, the blue emission intensity could significantly be enhanced by controlling the annealing time, which leads to a promising blue and green light-emitting material with controllable optical properties.

Quenching of Fluorescence of Reduced Graphene Oxide by Nitrogen-Doping

The Doping of Reduced Graphene Oxide with Nitrogen and Its Effect on the Quenching of the Material’s Photoluminescence

Increased Magnetization of Reduced Graphene Oxide by Nitrogen-Doping

Revealing the Underlying Absorption and Emission Mechanism of Nitrogen Doped Graphene Quantum Dots.

Photochemical Doping of Graphene Oxide with Nitrogen for Photoluminescence Enhancement

Preparation of Doped Graphene Quantum Dots with Bright and Excitation-Independent Blue Fluorescence

Water Soluble Reduced Graphene Oxide As an Efficient Photoluminescence Quencher for Semiconductor Quantum Dots

Photochemical Doping of Graphene Oxide Thin Film with Nitrogen for Photoconductivity Enhancement

The Role of Graphene Oxide Precursor Morphology in Magnetic and Microwave Absorption Properties of Nitrogen-Doped Graphene

Role of Pyridinic-N for Nitrogen-doped Graphene Quantum Dots in Oxygen Reaction Reduction

Simultaneous Nitrogen-Doping and Reduction of Graphene Oxide

Synthesis and Photoluminescence of F and N Co-Doped Reduced Graphene Oxide

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Nitrogen-doped graphene quantum dots with oxygen-rich functional groups.

Significant enhancement of blue emission and electrical conductivity of N-doped graphene

Doping: Versatile Graphene Quantum Dots with Tunable Nitrogen Doping (part. Part. Syst. Charact. 5/2014)

Ultra-High Quantum Yield of Graphene Quantum Dots: Aromatic-Nitrogen Doping and Photoluminescence Mechanism

Atomic-Level Insights into Defect-Driven Nitrogen Doping of Reduced Graphene Oxide

Synthesis of nitrogen doped graphene with high electrocatalytic activity toward oxygen reduction reaction

Energy-level structure of nitrogen-doped graphene quantum dots

Versatile Graphene Quantum Dots with Tunable Nitrogen Doping