Optoelectronic Modulation of Undoped NiO x Films for Inverted Perovskite Solar Cells via Intrinsic Defect Regulation
Menglei Feng,Ming Wang,Hongpeng Zhou,Wei Li,Xiuhua Xie,Shuangpeng Wang,Zhigang Zang,Shijian Chen
DOI: https://doi.org/10.1021/acsaem.0c01330
IF: 6.4
2020-10-12
ACS Applied Energy Materials
Abstract:Ni vacancy (V<sub>Ni</sub>) as an intrinsic defect plays an important role in the optical and electronic properties of NiO<sub><i>x</i></sub> films for inverted planar perovskite solar cell (PSC) applications. This work presents a facile method to fabricate highly dense and continuous NiO<sub><i>x</i></sub> films with excellent optical transmittance and electronic conductivity by pulsed laser deposition. By simply adjusting the preparation parameters, including oxygen partial pressure, postannealing temperature, and duration time, the well-regulated V<sub>Ni</sub> defects contribute to the modified conductivity and optical transmittance of the NiO<sub><i>x</i></sub> films. The conductivity and optical transmittance of NiO<sub><i>x</i></sub> films are all dramatically enhanced with the increasing oxygen partial pressure. Specifically, the valence band level of NiO<sub><i>x</i></sub> is adjusted by the V<sub>Ni</sub> defect densities to better match or align with that of the perovskite layer for faster hole extraction with lower energy losses. Density functional theory calculation displays that the Fermi energy level is shifted to a lower energy level due to the enhanced hole carrier concentration generated from the increased V<sub>Ni</sub>. Benefiting from the excellent optical transmittance, electronic conductivity, and well-matched energy alignment, the inverted PSC with NiO<sub><i>x</i></sub> hole transport layer (HTL) exhibits the highest power conversion efficiency of 16.85% with high open-circuit voltage (1.14 V), short-circuit current density (20.49 mA/cm<sup>2</sup>), fill factor (0.72), and negligible current–voltage hysteresis effect. This work reveals that modulating the intrinsic defects of NiO<sub><i>x</i></sub> HTLs is an efficient way to achieve high performance of NiO<sub><i>x</i></sub>-based inverted PSCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01330?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01330</a>.Film deposition, device fabrication, device characterization, and DFT calculation (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01330/suppl_file/ae0c01330_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,energy & fuels