Abstract:Herein, the synthesis of a stable and homogeneous boron‐doped graphene film using triethylborane as a single source of carbon and boron is reported. The effects of triethylborane amount and growth time on the synthesis of doped graphene are investigated under the same growth conditions on polycrystalline copper foil in a three‐zone chemical vapor deposition (CVD) system, which has not thus far been researched in detail. The findings show that boron‐doped graphene films are successfully synthesized. The results enable the design of a recipe for thin‐film doped graphene grown with optimum optical transmission and sheet resistance via amending TEB molarity and growth time. Such changes suggest that the single‐layer graphene film with high homogeneity can be obtained for the film grown using 0.5 m triethylborane along with 10 min growth time as confirmed by Raman mapping and atomic force microscope (AFM) measurements. It is further revealed that increasing the amount of triethylborane and growth times leads to the formation of thicker graphene films. In addition, X‐ray photoelectron spectrometer (XPS) measurements indicate that boron atoms get into a honeycomb structure, thanks to substitutional doping. The findings of this study have significant implications for the implementation of boron‐doped graphene films in semiconductor‐based technology. Single‐layer boron‐doped graphene films with high homogeneity are synthesized using triethylborane (TEB) in chemical vapor deposition. Amendments in TEB molarity and growth time are found to be very effective on the thickness of the graphene film and the doping amount. Boron doping is found to be homogeneous and permanent in the hexagonal structure that is evidenced by Raman mapping and X‐ray photoelectron spectrometer.

Synthesis of Boron-Doped Graphene Monolayers Using the Sole Solid Feedstock by Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Nitrogen and Boron Doped Monolayer Graphene by Chemical Vapor Deposition Using Polystyrene, Urea and Boric Acid

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Growth and electronic structure of boron-doped graphene

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

Boron Nitride Substrates for High-Quality Graphene Electronics.

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Effects of growth conditions on the quality of B-doped graphene films

Low pressure chemical vapor deposition synthesis of large area hetero-doped mono- and few- layer graphene with nitrogen and oxygen species

Boron Doping of Graphene for Graphene–Silicon P–n Junction Solar Cells

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Structure Of Chemically Derived Mono- And Few-Atomic-Layer Boron Nitride Sheets

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates