Abstract:Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p–n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.The advanced assembly strategies for large-area, two-dimensional crystals of organic semiconductors over sub-millimeter even to wafer size, electrical integrated transistors, as well as their burgeoning photoelectrical devices are discussed in this outlook.

Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Large-scale Fabrication of Field-Effect Transistors Based on Solution-Grown Organic Single Crystals

High Mobility Organic Transistors Fabricated from Single Pentacene Microcrystals Grown on a Polymer Film

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Conducting AFM and 2D GIXD studies on pentacene thin films

Wafer‐scale Epitaxial Growth of Two‐dimensional Organic Semiconductor Single Crystals Toward High‐performance Transistors

Temperature gradient approach to grow large, preferentially oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystals for organic thin film transistors

Graphene‐Quantum‐Dots‐Induced Centimeter‐Sized Growth of Monolayer Organic Crystals for High‐Performance Transistors

Stacked pentacene layer organic thin-film transistors with improved characteristics

Controlling the crystal formation in solution-process for organic field-effect transistors with high-performance

Self‐Limited Epitaxial Growth of Patterned Monolayer Organic Crystals for Polarization‐Sensitive Phototransistor with Ultrahigh Dichroic Ratio

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

Controlled 2D growth of organic semiconductor crystals by suppressing “coffee-ring” effect

Volatilize-controlled Oriented Growth of the Single-Crystal Layer for Organic Field-Effect Transistors.

Scalable Growth of Organic Single‐Crystal Films via an Orientation Filter Funnel for High‐Performance Transistors with Excellent Uniformity

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Electrical properties of organic field-effect transistors based on ribbon-like tips-pentacene crystals

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method