Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

Enhanced Broadband Emission from Er-Tm Codoped ZnO Film Due to Energy Transfer Processes Involving Si Nanocrystals

Multicolor upconversion emissions in Tm 3+/Er3+ codoped tellurite photonic microwire between silica fiber tapers.

Near infrared broadband from Er-Tm codoped zinc oxide and temperature-dependent properties

Electroluminescence from light-emitting device with erbium-doped TiO2 film sputtered on p+-Si substrate: Enhancement effect of codoping zirconium

Near Infrared Broadband from Er-Tm Co Dop Ed Zinc Oxide and Temp Erature-Dep Endent Prop Erties

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping.

Er3+ related 1.53μm emission from Er–Si-codoped ZnO multilayer film prepared by rf-sputtering

Color‐tunable and White Emission of Tm3+ Doped Transparent Zinc Silicate Glass‐ceramics Embedding ZnO Nanocrystals

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Improved Resonant Energy Transfer and Light Emission from SnO2 Nanocrystals and Er3+ Embedded in Silica Films Via Yb3+ Co-Doping

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Strong Energy-Transfer-Induced Enhancement of Er3+ Luminescence in In2o3 Nanocrystal Codoped Silica Films

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Near-infrared Emission of Yb3+ Through Energy Transfer from ZnO to Yb3+ in Glass Ceramic Containing ZnO Nanocrystals.

Improved Sensitization Efficiency in Er(3+) Ions and SnO2 Nanocrystals Co-Doped Silica Thin Films.

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

Enhanced electroluminescence from SnO_2 nanocrystals/Er^3+ co-doped silica thin film via Yb^3+ doping