Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing
Siheng Chen,Peng Cui,Handoko Linewih,Kuan Yew Cheong,Mingsheng Xu,Xin Luo,Liu Wang,Jiuji Sun,Jiacheng Dai,Jisheng Han,Xiangang Xu
DOI: https://doi.org/10.1016/j.sse.2024.108861
IF: 1.916
2024-01-21
Solid-State Electronics
Abstract:The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H 2 /N 2 annealing whereby the amount of Ga–O bonds is decreased. Compared with N 2 annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency ( f T / f max ) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.
physics, condensed matter, applied,engineering, electrical & electronic