Abstract:Graphene is well known for its excellent physical and chemical properties and can be used in various fields. Its application technology has become an important direction of research. In this study, a patterning technology of transfer-free graphene is reported, and graphene transparent electrodes of near-ultraviolet light-emitting diodes (LEDs) are fabricated accordingly. In the scheme, Ni film plays the dual role of an etching mask and graphene growth catalyst, realizing the patterning growth of graphene. An SiO2 isolation layer is deposited between Ni and the substrate, avoiding the fusing of the substrate with Ni by the high temperature of graphene growth, which makes the method applicable to nominally any high temperature-compatible metal and semiconductor substrates. Both Ni and SiO2 are then removed, thus directly achieving a good contact between graphene and the substrate. The graphene transparent electrodes fabricated by this method greatly improves the performance of near-ultraviolet LEDs, which is even better than that of indium tin oxide (ITO) in the near-ultraviolet band based on the optical measurement results. This scheme avoids any possible damage and contamination of graphene in traditional transfer and lithography patterning processes, which is scalable and suitable for real applications. A technology for the fabrication of transfer-free, patterned graphene on semiconductor or weakly catalytic metal substrate is presented, and the graphene transparent electrodes on GaN-based LED with 398 nm wavelength is fabricated accordingly.

The Fabrication of GaN-based Nanorod Light-Emitting Diodes with Multilayer Graphene Transparent Electrodes

N-ZnO nanorod arrays/p-GaN light-emitting diodes with graphene transparent electrode

Gan Nanorod Light Emitting Diodes with Suspended Graphene Transparent Electrodes Grown by Rapid Chemical Vapor Deposition

Enhanced Opto-Electrical Properties of Graphene Electrode InGaN/GaN LEDs with a NiOx Inter-Layer

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor.

Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes

Annealed Ingan Green Light-Emitting Diodes With Graphene Transparent Conductive Electrodes

Efficient Performance Enhancement of GaN-based Vertical Light-Emitting Diodes Coated with N-doped Graphene Quantum Dots

A Patterning Technology of Transfer-Free Graphene for Transparent Electrodes of Near-Ultraviolet Light-Emitting Diodes

Pyramid Array InGaN/GaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes

Graphene-Based Transparent Conductive Electrodes for Gan-Based Light Emitting Diodes: Challenges and Countermeasures

Gate tunable surface plasmon resonance enhanced graphene/Ag nanoparticles-polymethyl methacrylate/graphene/p-GaN heterostructure light-emitting diodes.

Light Extraction Efficiency Enhancement of GaN-based Light Emitting Diodes by a ZnO Current Spreading Layer

Localized Surface Plasmon Coupling Nanorods with Graphene As a Transparent Conductive Electrode for Micro Light-Emitting Diodes

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Enhanced Performance of Gan-Based Light-Emitting Diodes with Graphene/Ag Nanowires Hybrid Films