Effect of Film Thickness on the Structural, Electrical and Optical Properties of ZnO∶ Y Films

Tian-lin YANG,Shu-mei SONG,Yan-qing XIN,Yan-hui LI,Gui-qiang DU,Sheng-hao HAN

DOI: https://doi.org/10.3969/j.issn.1000-985X.2012.05.008

2012-01-01

Abstract:A new transparent conductive oxide (TCO) film with low resistivity and high transmittance in the visible range, yttrium-doped zinc oxide (ZnO:Y), has been successfully prepared by RF magnetron sputtering method on glass substrates at room temperature. The structural, electrical and optical properties as a function of film thickness were investigated. The films with different thickness are polycrystalline with a hexagonal structure and have a preferred orientation of (002). The resistivity decreases as the film thickness increasing. When the thickness is 800 nm, the resistivity, Hall mobility and carrier concentration are 8.36×10-4 Ω·cm, 15.3 cm2 ·V-1 ·s-1 and 4.88×1020 cm-3, respectively. All the films achieved present a high transmittance of above 90% in the visible range, and optical band gap decreases from 3.68 eV to 3.61 eV as the thickness increases from 200 nm to 800 nm.