Structural, electrical and optical properties of zirconium-doped zinc oxide films prepared by radio frequency magnetron sputtering

Maoshui Lv,Xianwu Xiu,Zhiyong Pang,Ying Dai,Lina Ye,Chuanfu Cheng,Shenghao Han
DOI: https://doi.org/10.1016/j.tsf.2007.06.173
IF: 2.1
2008-01-01
Thin Solid Films
Abstract:Transparent and conducting zirconium-doped zinc oxide films have been prepared by radio frequency magnetron sputtering at room temperature. The ZrO2 content in the target is varied from 0 to 10 wt.%. The films are polycrystalline with a hexagonal structure and a preferred orientation along the c axis. As the ZrO2 content increases, the crystallinity and conductivity of the film are initially improved and then both show deterioration. Zr atoms mainly substitute Zn atoms when the ZrO2 content are 3 and 5 wt.%, but tend to cluster into grain boundaries at higher contents. The lowest resistivity achieved is 2.07×10−3 Ω cm with the ZrO2 content of 5 wt.% with a Hall mobility of 16 cm2 V−1 s−1 and a carrier concentration of 1.95×1020 cm−3. All the films present a high transmittance of above 90% in the visible range. The optical band gap depends on the carrier concentration, and the value is larger at higher carrier concentration.
What problem does this paper attempt to address?