Abstract:In this paper, a line-scanning irradiation of <0001> 6H-SiC single crystal by a femtosecond laser focus was implemented for laser fluence of 2.2 J/cm 2 at different scanning velocities from 1000 down to 100 μm/s. The morphology of the obtained ablation lines characterized by a scanning electron microscope shows that there progressively appear three-level ripples with average period of about 222, 600 nm and that between them. Possible formation mechanisms for these three-level ripples were analyzed by numerical simulation employing finite-difference time-domain method (FDTD). Analysis shows that as Obara proposed, the interference of incident wave with the wave scattered by scratches possibly left by fine polishing is the most possible reason for inducing 222 nm-period and 600 nm-period ripples. Main discussions were focused on the orientation characteristics of ripples. Both isolated scratches and crossed scratches with different orientation angles were considered for evaluating their role in field redistribution. The detailed simulations indicate that for scratches oriented 90° with respect to laser polarization generate a pair of strongest ripple-like optical field enhancement compared to scratches with other orientation angles. It is these advantages of 90°-oriented scratch in field enhancement that make the final ripple perpendicular to laser polarization most competitive and finally left on the surface. This complements the physical picture of Obara et al. in terms of their negligence in addressing the orientation characteristics of ripples. Further FDTD simulation of the interaction of incident wave with as-formed 600 nm-period ripples shows that the optical field enhancement located between any two adjacent 600 nm-period ripples is the driving force for splitting 600 nm-period ripples into the third ripples with period between 222 and 600 nm.

Unclassical ripple patterns in single-crystal silicon produced by femtosecond laser irradiation

Femtosecond Laser-Induced Cross-Periodic Structures on A Crystalline Silicon Surface under Low Pulse Number Irradiation

Research on Periodic Structures Aroused by Femtosecond Laser Irradiation on Single-Crystalline Silicon Wafer

Femtosecond Laser Induced Ripples And Nanohole Arrays On Silicon

Sub-wavelength Ripple Formation on Silicon Induced by Femtosecond Laser Radiation

Discussion of the possible formation mechanism of near-wavelength ripples on silicon induced by femtosecond laser

Periodic Subwavelength Ripples On A Si Surface Induced By A Single Temporally Shaped Femtosecond Laser Pulse: Enhanced Periodic Energy Deposition And Reduced Residual Thermal Effect

Periodic Ripple Structures on Silicon Substrates Induced by Femtosecond Laser at Various Scan Modes

Curved Periodic Ripples Fabricated by Double Time-Delayed Femtosecond Laser Beams on the Silicon Surface.

Dynamics Of Femtosecond Laser-Induced Periodic Surface Structures On Silicon By High Spatial And Temporal Resolution Imaging

On the Generation of Grooves on Crystalline Silicon Irradiated by Femtosecond Laser Pulses

The Three-Level Ripples Induced by Femtosecond Laser on a 6H-Sic Single Crystal and the Formation Mechanism

Coalescence and dislocation of laser induced periodic ripples on silicon by double time delayed femtosecond laser beams

The Ripples and Nanoparticles on Silicon Irradiated by Femtosecond Laser

Ripple Formation in Excimer Laser-Irradiated Silicon Dioxide/silicon System

A combined model for formation mechanism of ripples induced by femtosecond laser on silicon carbide

Direct Writing of Sub-Wavelength Ripples on Silicon Using Femtosecond Laser at High Repetition Rate

Deep UV laser induced periodic surface structures on silicon formed by self-organization of nanoparticles

Ultrafast imaging on the formation of periodic ripples on a Si surface with a prefabricated nanogroove induced by a single femtosecond laser pulse.

Crystal Orientation Dependence of Femtosecond Laser-Induced Periodic Surface Structure on (100) Silicon

Generation of Supra-Wavelength Grooves in Femtosecond Laser Surface Structuring of Silicon