Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Thibault J.-Y. Derrien,Tatiana E. Itina,Rémi Torres,Thierry Sarnet,Marc Sentis
DOI: https://doi.org/10.1063/1.4818433
2013-08-02
Abstract:The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
Materials Science,Optics,Plasma Physics
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