Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

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Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Investigation on self-heating effect in carbon nanotube field-effect transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

Full-Band Quantum Transport Based Simulation for Carbon Nanotube Field Effect Transistor from Chirality to Device Performance

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Insight into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Directly Correlating the Strain-Induced Electronic Property Change to the Chirality of Individual Single-Walled and Few-Walled Carbon Nanotubes

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Nonideality in Arrayed Carbon Nanotube Field Effect Transistors Revealed by High-Resolution Transmission Electron Microscopy